Low resistance spin-dependent tunnel junctions with HfAlO/sub x/-barriers for MTJ recording head application

2003 ◽  
Author(s):  
Jianguo Wang ◽  
P.P. Freitas
Keyword(s):  
Tunnel Junctions ◽  
Recording Head ◽  
Low Resistance

scholarly journals Low-resistance spin-dependent tunnel junctions with HfAlO/sub x/ barriers for high-density recording-head application

2002 ◽  
Vol 38 (5) ◽  
pp. 2703-2705 ◽  
Author(s):  
Jianguo Wang ◽  
P.P. Freitas ◽  
E. Snoeck ◽  
X. Batlle ◽  
J. Cuadra
Keyword(s):  
Tunnel Junctions ◽  
High Density ◽  
Recording Head ◽  
Low Resistance ◽  
High Density Recording

Low-resistance IrMn and PtMn tunnel valves for recording head applications

2001 ◽  
Vol 89 (11) ◽  
pp. 7353-7355 ◽  
Author(s):  
J. R. Childress ◽  
M. M. Schwickert ◽  
R. E. Fontana ◽  
M. K. Ho ◽  
P. M. Rice ◽  
...  
Keyword(s):  
Recording Head ◽  
Low Resistance

Low resistance tunnel junctions with remote plasma underoxidized thick barriers

2005 ◽  
Vol 97 (10) ◽  
pp. 10C903 ◽  
Author(s):  
R. Ferreira ◽  
P. P. Freitas ◽  
M. MacKenzie ◽  
J. N. Chapman
Keyword(s):  
Tunnel Junctions ◽  
Remote Plasma ◽  
Low Resistance

Effect of natural oxidation conditions on low resistance spin tunnel junctions

2002 ◽  
Vol 91 (10) ◽  
pp. 8786 ◽  
Author(s):  
Z. G. Zhang ◽  
P. P. Freitas ◽  
A. R. Ramos ◽  
N. P. Barradas ◽  
J. C. Soares
Keyword(s):  
Tunnel Junctions ◽  
Low Resistance

scholarly journals Low resistance spin-dependent tunnel junctions with ZrAlO[sub x] barriers

2002 ◽  
Vol 91 (10) ◽  
pp. 7463 ◽  
Author(s):  
Jianguo Wang ◽  
P. P. Freitas ◽  
E. Snoeck ◽  
X. Battle ◽  
J. Cuadra
Keyword(s):  
Tunnel Junctions ◽  
Low Resistance

scholarly journals All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

2021 ◽  
Vol 54 (15) ◽  
pp. 155103
Author(s):  
Syed M N Hasan ◽  
Brendan P Gunning ◽  
Zane J.-Eddine ◽  
Hareesh Chandrasekar ◽  
Mary H Crawford ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Tunnel Junctions ◽  
Low Resistance

Transport Properties of Low Resistance Underoxidized Magnetic Tunnel Junctions

2007 ◽  
Vol 43 (6) ◽  
pp. 2815-2817 ◽  
Author(s):  
J. Ventura ◽  
R. Ferreira ◽  
J. M. Teixeira ◽  
A. M. Pereira ◽  
J. P. Araujo ◽  
...  
Keyword(s):  
Transport Properties ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Low Resistance

High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2semiconducting barrier with a low resistance–area product

2016 ◽  
Vol 10 (1) ◽  
pp. 013008 ◽  
Author(s):  
Koki Mukaiyama ◽  
Shinya Kasai ◽  
Yukiko K. Takahashi ◽  
Kouta Kondou ◽  
Yoshichika Otani ◽  
...  
Keyword(s):  
Output Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Low Resistance ◽  
Area Product ◽  
High Output Voltage ◽  
High Output

High Magnetoresistance Ratio and Low Resistance–Area Product in Magnetic Tunnel Junctions with Perpendicularly Magnetized Electrodes

2010 ◽  
Vol 3 (5) ◽  
pp. 053003 ◽  
Author(s):  
Kay Yakushiji ◽  
Kenji Noma ◽  
Takeshi Saruya ◽  
Hitoshi Kubota ◽  
Akio Fukushima ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Low Resistance ◽  
Magnetoresistance Ratio ◽  
Area Product

scholarly journals Low-resistance spin-dependent tunnel junctions with ZrAlOx barriers

2001 ◽  
Vol 79 (27) ◽  
pp. 4553-4555 ◽  
Author(s):  
Jianguo Wang ◽  
P. P. Freitas ◽  
E. Snoeck
Keyword(s):  
Tunnel Junctions ◽  
Low Resistance
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