The reaction mechanism of cupric oxide reduction under hydrogen plasma treatment for epoxy molding compound / lead-frames adhesion improve

2016 ◽  
Author(s):  
Min-Fong Shu ◽  
Bret Yang ◽  
Webber Liu ◽  
Yi-Hsiu Tseng
Keyword(s):  
Reaction Mechanism ◽  
Plasma Treatment ◽  
Cupric Oxide ◽  
Hydrogen Plasma ◽  
Oxide Reduction ◽  
Epoxy Molding Compound ◽  
Molding Compound

Warpage Control Method in Epoxy Molding Compound

2020 ◽  
Author(s):  
Wei Tan ◽  
Cheng Cheng ◽  
Hongjie Liu ◽  
Yangyang Duan ◽  
Linlin Liu ◽  
...  
Keyword(s):  
Control Method ◽  
Epoxy Molding Compound ◽  
Molding Compound

Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
High Efficiency ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
High Efficiency Solar Cells ◽  
Wide Gap

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

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