Improved crystalline quality of GaN by substrate ion beam pre-treatment

2002 ◽  
Author(s):  
Dongjin Byun ◽  
Yong Suk Cho ◽  
Jaekyun Kim ◽  
Young Ju Park ◽  
Eun Kyu Kim ◽  
...  
Keyword(s):  
Ion Beam ◽  
Crystalline Quality ◽  
Pre Treatment

Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4299-4303 ◽  
Author(s):  
Yong Suk Cho ◽  
Junggeun Jhin ◽  
Eui Kwan Koh ◽  
Young Ju Park ◽  
Eun Kyu Kim ◽  
...  
Keyword(s):  
Ion Beam ◽  
Crystalline Quality

Characterization of the crystalline quality of β-SiC formed by ion beam synthesis

2006 ◽  
Vol 249 (1-2) ◽  
pp. 851-855 ◽  
Author(s):  
S. Intarasiri ◽  
A. Hallén ◽  
T. Kamwanna ◽  
L.D. Yu ◽  
G. Possnert ◽  
...  
Keyword(s):  
Ion Beam ◽  
Crystalline Quality ◽  
Ion Beam Synthesis

Evaluation of Crystalline Quality of Zirconium Dioxide Films on Silicon by Means of Ion Beam Channeling

1988 ◽  
Vol 116 ◽  
Author(s):  
Yoshiki Nishibayashi ◽  
Takeshi Imura ◽  
Yukio Osaka ◽  
Hirofumi Fukumoto
Keyword(s):  
Angular Dependence ◽  
Energy Dependence ◽  
Epitaxial Layer ◽  
Zirconium Dioxide ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Vacuum Evaporation ◽  
Crystalline Quality ◽  
Crystallite Orientation

AbstractZirconium dioxide (ZrO2) films are deposited on Si(100) and Si(lll) substrates at 800ºC by vacuum evaporation. Channeling spectrum of the Rutherford backscattering shows that ZrO2 films (tetragonal(200)) are epitaxially grown on the Si(100) substrate. The fluctuation of crystallite orientation in the epitaxial layer is estimated to be 0.32º, by analyzing the angular dependence of the aligned and random backscattering spectra. Energy dependence of dechanneling factors in 0.3—2.0 MeV 4He+ indicates that the dominant defect arises from the stackingfaults.

Evaluation of crystalline quality of zirconium dioxide films on silicon by means of ion‐beam channeling

1988 ◽  
Vol 63 (2) ◽  
pp. 581-582 ◽  
Author(s):  
Yukio Osaka ◽  
Takeshi Imura ◽  
Yoshiki Nishibayashi ◽  
Fumitaka Nishiyama
Keyword(s):  
Zirconium Dioxide ◽  
Ion Beam ◽  
Crystalline Quality

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Sign in / Sign up

Export Citation Format

Share Document