Simulation of electron and ion beam optics for high throughput lithography

Abstract Semiconductor devices with critical dimensions less than 20nm are now being manufactured in volume. A challenge facing the failure analysis and process-monitoring community is two-fold. The first challenge of TEM sample prep of such small devices is that the basic need to end-point on a feature-of-interest pushes the imaging limit of the instrument being used to prepare the lamella. The second challenge posed by advanced devices is to prepare an artifact-free lamella from non-planar devices such as finFETs as well as from structures incorporating ‘non-traditional’ materials. These challenges are presently overcome in many advanced logic and memory devices in the focused ion beam-based TEM sample preparation processes by inverting the specimen prior to thinning to electron transparency. This paper reports a highthroughput method for the routine preparation of artifact-free TEM lamella of 20nm thickness, or less.

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Charged particle single nanometre manufacturing

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.9.266 ◽

2018 ◽

Vol 9 ◽

pp. 2855-2882 ◽

Cited By ~ 1

Author(s):

Philip D Prewett ◽

Cornelis W Hagen ◽

Claudia Lenk ◽

Steve Lenk ◽

Marcus Kaestner ◽

...

Keyword(s):

Charged Particle ◽

High Throughput ◽

Nanoimprint Lithography ◽

Ion Beam ◽

Ambient Air ◽

Particle Beam ◽

Vacuum System ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Charged Particle Beam

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

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A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽

10.3390/instruments5010010 ◽

2021 ◽

Vol 5 (1) ◽

pp. 10

Author(s):

Sören Möller ◽

Daniel Höschen ◽

Sina Kurth ◽

Gerwin Esser ◽

Albert Hiller ◽

...

Keyword(s):

Gamma Ray ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Complete Analysis ◽

Nuclear Reaction Analysis ◽

Beam Optics ◽

Single Measurement ◽

Ion Beam Analysis ◽

Beam Analysis ◽

Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

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Ion beam optics of misaligned beam transport elements

Nuclear Instruments and Methods ◽

10.1016/0029-554x(77)90229-4 ◽

1977 ◽

Vol 143 (3) ◽

pp. 423-427 ◽

Cited By ~ 10

Author(s):

D. Heck

Keyword(s):

Ion Beam ◽

Beam Transport ◽

Beam Optics

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14C AMS Measurements of <100 μG Samples with a High-Current System

Radiocarbon ◽

10.1017/s0033822200018117 ◽

1997 ◽

Vol 40 (1) ◽

pp. 247-253 ◽

Cited By ~ 26

Author(s):

Karl F. Von Reden ◽

Ann P. McNichol ◽

Ann Pearson ◽

Robert J. Schneider

Keyword(s):

Current System ◽

Ion Beam ◽

Beam Current ◽

Small Sample ◽

Small Samples ◽

High Current ◽

Beam Optics ◽

Woods Hole Oceanographic Institution ◽

Factors Affecting ◽

The Past

The NOSAMS facility at Woods Hole Oceanographic Institution has started to develop and apply techniques for measuring very small samples on a standard Tandetron accelerator mass spectrometry (AMS) system with high-current hemispherical Cs sputter ion sources. Over the past year, results on samples ranging from 7 to 160 μg C showed both the feasibility of such analyses and the present limitations on reducing the size of solid carbon samples. One of the main factors affecting the AMS results is the dependence of a number of the beam optics parameters on the extracted ion beam current. The extracted currents range from 0.5 to 10 μA of 12C− for the sample sizes given above. We here discuss the setup of the AMS system and methods for reliable small-sample measurements and give the AMS-related limits to sample size and the measurement uncertainties.

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High-throughput investigation of crystal-to-glass transformation of Ti–Ni–Cu ternary alloy

Scientific Reports ◽

10.1038/s41598-019-56129-z ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 3

Author(s):

Jian Hui ◽

Haiqian Ma ◽

Zheyu Wu ◽

Zhan Zhang ◽

Yang Ren ◽

...

Keyword(s):

Glass Transition ◽

Solid State ◽

High Throughput ◽

Solid State Reaction ◽

Ion Beam ◽

Ion Beam Sputtering ◽

X Ray ◽

Layer Sequence ◽

Before And After ◽

Key Factor

AbstractA high-throughput investigation of metallic glass formation via solid-state reaction was reported in this paper. Combinatorial multilayered thin-film chips covering the entire Ti–Ni–Cu ternary system were prepared using ion beam sputtering technique. Microbeam synchrotron X-ray diffraction (XRD) and X-ray fluorescence (XRF) measurements were conducted, with 1,325 data points collected from each chip, to map out the composition and the phase constitution before and after annealing at 373 K for 110 hours. The composition dependence of the crystal-to-glass transition by solid-state reaction was surveyed using this approach. The resulting composition–phase map is consistent with previously reported results. Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) was performed on the representative compositions to determine the inter-diffusion between layers, the result shows that the diffusion of Ti is the key factor for the crystal-to-glass transition. In addition, both layer thickness and layer sequence play important roles as well. This work demonstrates that combinatorial chip technique is an efficient way for systematic and rapid study of crystal-to-glass transition for multi-component alloy systems.

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Mapping the Relative Biological Effectiveness of Proton, Helium and Carbon Ions with High-Throughput Techniques

Cancers ◽

10.3390/cancers12123658 ◽

2020 ◽

Vol 12 (12) ◽

pp. 3658

Author(s):

Lawrence Bronk ◽

Fada Guan ◽

Darshana Patel ◽

Duo Ma ◽

Benjamin Kroger ◽

...

Keyword(s):

High Throughput ◽

Relative Biological Effectiveness ◽

Biological Effects ◽

Ion Beam ◽

Particle Beam ◽

Clonogenic Survival ◽

Carbon Ions ◽

Charged Particle Beams ◽

Biological Effectiveness ◽

Therapy Center

Large amounts of high quality biophysical data are needed to improve current biological effects models but such data are lacking and difficult to obtain. The present study aimed to more efficiently measure the spatial distribution of relative biological effectiveness (RBE) of charged particle beams using a novel high-accuracy and high-throughput experimental platform. Clonogenic survival was selected as the biological endpoint for two lung cancer cell lines, H460 and H1437, irradiated with protons, carbon, and helium ions. Ion-specific multi-step microplate holders were fabricated such that each column of a 96-well microplate is spatially situated at a different location along a particle beam path. Dose, dose-averaged linear energy transfer (LETd), and dose-mean lineal energy (yd) were calculated using an experimentally validated Geant4-based Monte Carlo system. Cells were irradiated at the Heidelberg Ion Beam Therapy Center (HIT). The experimental results showed that the clonogenic survival curves of all tested ions were yd-dependent. Both helium and carbon ions achieved maximum RBEs within specific yd ranges before biological efficacy declined, indicating an overkill effect. For protons, no overkill was observed, but RBE increased distal to the Bragg peak. Measured RBE profiles strongly depend on the physical characteristics such as yd and are ion specific.

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