Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model

2016 ◽  
Author(s):  
A. Dasgupta ◽  
S. Ghosh ◽  
S. A. Ahsan ◽  
Y. S. Chauhan ◽  
S. Khandelwal ◽  
...  
Keyword(s):  
Compact Model ◽  
Gan Hemts

scholarly journals Analysis of GaN HEMTs Switching Transients Using Compact Model

2017 ◽  
Vol 64 (7) ◽  
pp. 2900-2905 ◽  
Author(s):  
Soroush Faramehr ◽  
Petar Igic
Keyword(s):  
Compact Model ◽  
Gan Hemts

A new compact model for AlGaN/GaN HEMTs including self-heating effects

2017 ◽  
Author(s):  
Zhang Wen ◽  
Yuehang Xu ◽  
Qingzhi Wu ◽  
Yong Zhang ◽  
Ruimin Xu ◽  
...  
Keyword(s):  
Compact Model ◽  
Self Heating ◽  
Heating Effects ◽  
Gan Hemts

MIT virtual source GaNFET-high voltage (MVSG-HV) model: A physics based compact model for HV-GaN HEMTs

2014 ◽  
Vol 11 (3-4) ◽  
pp. 848-852 ◽  
Author(s):  
Ujwal Radhakrishna ◽  
Tadahiro Imada ◽  
Tomás Palacios ◽  
Dimitri Antoniadis
Keyword(s):  
High Voltage ◽  
Compact Model ◽  
Virtual Source ◽  
Gan Hemts

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

2016 ◽  
Vol 63 (4) ◽  
pp. 1478-1485 ◽  
Author(s):  
Binit Syamal ◽  
Xing Zhou ◽  
Siau Ben Chiah ◽  
Anand M. Jesudas ◽  
Subramaniam Arulkumaran ◽  
...  
Keyword(s):  
Steady State ◽  
Compact Model ◽  
Quasi Steady State ◽  
Charge Effects ◽  
Trap Charge ◽  
Gan Hemts

Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

2019 ◽  
Vol 66 (1) ◽  
pp. 357-363 ◽  
Author(s):  
Yonghao Jia ◽  
Yuehang Xu ◽  
Zhang Wen ◽  
Yunqiu Wu ◽  
Yongxin Guo
Keyword(s):  
Compact Model ◽  
Large Signal ◽  
Gate Capacitance ◽  
Gan Hemts

Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTs

2020 ◽  
Vol 67 (3) ◽  
pp. 834-840 ◽  
Author(s):  
Ankur Debnath ◽  
Nandita DasGupta ◽  
Amitava DasGupta
Keyword(s):  
Leakage Current ◽  
Compact Model ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts
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