A physics based analytical model and numerical simulation for current-voltage characteristics of microwave power AlGaN/GaN HEMT

2016 ◽  
Author(s):  
N. K. Subramani ◽  
J-C. Nallatamby ◽  
A. K. Sahoo ◽  
R. Sommet ◽  
R. Quere ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Analytical Model ◽  
Microwave Power ◽  
Gan Hemt ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT

2009 ◽  
Vol 53 (3) ◽  
pp. 341-348 ◽  
Author(s):  
M.A. Huque ◽  
S.A. Eliza ◽  
T. Rahman ◽  
H.F. Huq ◽  
S.K. Islam
Keyword(s):  
Analytical Model ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation

2021 ◽  
Vol 24 (04) ◽  
pp. 407-412
Author(s):  
A.V. Naumov ◽  
◽  
V.V. Kaliuzhnyi ◽  
S.A. Vitusevich ◽  
H. Hardtdegen ◽  
...  
Keyword(s):  
Electron Transport ◽  
Space Charge ◽  
Ultraviolet Excitation ◽  
Gan Hemt ◽  
Current Voltage ◽  
Significant Difference ◽  
Current Voltage Characteristics ◽  
Uv Excitation ◽  
Biosensor Applications ◽  
Space Charge Limited

In this work, we have investigated the features of electron transport in AlGaN/GaN transistor-like heterostructures with nanowires of different width. These nanostructures are studied extensively because of their great electronic and sensing advantages for electronic biosensor applications. We study the depletion effects and impact of ultraviolet excitation on the electron transport in sets of nanowires of different width from 1110 down to 185 nm. We have found significant difference in electrical characteristic’s behavior between wide (1110…480 nm) and narrow (280…185 nm) nanowires and have observed regions related to space-charge-limited transport for the narrowest nanowires. Also, we obtained evident dependence of nanowire’s current-voltage characteristics on the wavelength and energy of UV excitation. External UV excitation allows us to control the depletion widths in nanowires and effectively tune space-charge-limited transport.

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers

2011 ◽  
Vol 679-680 ◽  
pp. 808-811
Author(s):  
Fabrizio Roccaforte ◽  
Giuseppe Greco ◽  
Ming Hung Weng ◽  
Filippo Giannazzo ◽  
Vito Raineri
Keyword(s):  
Structural Properties ◽  
Surface Defects ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Near Surface ◽  
Channel Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Current Voltage ◽  
Current Voltage Characteristics

In this work the electrical and structural properties of AlGaN/GaN heterostructures grown onto 8°-off-axis 4H-SiC epilayers were investigated. A morphological and structural analysis of the samples showed the presence of “V-shaped” near-surface defects in the AlGaN layer, with a preferential orientation along the miscut direction [11-20]. In the presence of these defects an anisotropy of the current-voltage characteristics of high electron mobility transistors (HEMTs), fabricated with two different orientations, was observed. The sheet carrier density ns and the channel mobility n were determined from the device characteristics. The results were discussed considering the possible implications for AlGaN/GaN HEMT technology.

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