Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL

2006 ◽  
Author(s):  
T. Lacrevaz ◽  
B. Flechet ◽  
A. Farcy ◽  
J. Torres ◽  
T.T. Vo ◽  
...  
Keyword(s):  
Wide Band ◽  
High Permittivity ◽  
Band Frequency ◽  
High K ◽  
Mim Capacitors

Wide band frequency and in situ characterization of high permittivity insulators (high-k) for high-speed integrated passives

2005 ◽  
Vol 82 (3-4) ◽  
pp. 548-553 ◽  
Author(s):  
T. Lacrevaz ◽  
B. Fléchet ◽  
A. Farcy ◽  
J. Torres ◽  
M. Gros-Jean ◽  
...  
Keyword(s):  
High Speed ◽  
Wide Band ◽  
In Situ Characterization ◽  
High Permittivity ◽  
Band Frequency ◽  
Integrated Passives ◽  
High K

Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2184-2188 ◽  
Author(s):  
T. Lacrevaz ◽  
B. Fléchet ◽  
A. Farcy ◽  
J. Torres ◽  
M. Gros-Jean ◽  
...  
Keyword(s):  
Wide Band ◽  
High Permittivity ◽  
Band Frequency ◽  
Integrated Passives ◽  
High K

Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO2Thin Films for MIM Capacitors

2017 ◽  
Vol 38 (3) ◽  
pp. 375-378 ◽  
Author(s):  
Ahmad Chaker ◽  
Cedric Bermond ◽  
Philippe Artillan ◽  
Patrice Gonon ◽  
Christophe Vallee ◽  
...  
Keyword(s):  
Wide Band ◽  
Band Frequency ◽  
Mim Capacitors

Ultra wide band frequency characterization of integrated TiTaO-based metal–insulator–metal devices

2011 ◽  
Vol 110 (4) ◽  
pp. 044110 ◽  
Author(s):  
Thomas Bertaud ◽  
Cédric Bermond ◽  
Fatiha Challali ◽  
Antoine Goullet ◽  
Christophe Vallée ◽  
...  
Keyword(s):  
Wide Band ◽  
Ultra Wide Band ◽  
Metal Insulator ◽  
Band Frequency ◽  
Metal Insulator Metal

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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