The effect of temperature during helium ion implantation-induced crystallization of iron-based amorphous alloys

2002 ◽  
Author(s):  
H. Wakabayashi ◽  
T. San-no ◽  
T. Toriyama ◽  
N. Hayashi
Keyword(s):  
Ion Implantation ◽  
Amorphous Alloys ◽  
Effect Of Temperature ◽  
Helium Ion ◽  
Iron Based ◽  
Induced Crystallization

Environmental Testing of Iron-Based Amorphous Alloys

2008 ◽  
Vol 39 (2) ◽  
pp. 225-234 ◽  
Author(s):  
Raul B. Rebak ◽  
S. Daniel Day ◽  
Tiangan Lian ◽  
Phillip D. Hailey ◽  
Joseph C. Farmer
Keyword(s):  
Amorphous Alloys ◽  
Environmental Testing ◽  
Iron Based

Membrane folding by helium ion implantation for three-dimensional device fabrication

2007 ◽  
Vol 25 (6) ◽  
pp. 2184 ◽  
Author(s):  
William J. Arora ◽  
Sybren Sijbrandij ◽  
Lewis Stern ◽  
John Notte ◽  
Henry I. Smith ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Device Fabrication ◽  
Helium Ion

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Microstructure of electrodeposited tungsten coatings after 30 keV helium ion implantation

2019 ◽  
Vol 144 ◽  
pp. 164-171
Author(s):  
Ningbo Sun ◽  
Shaoting Lang ◽  
Yingchun Zhang
Keyword(s):  
Ion Implantation ◽  
Helium Ion

The effect of the cobalt-content on the magnetic properties of iron-based amorphous alloys

2019 ◽  
Vol 477 ◽  
pp. 214-219 ◽  
Author(s):  
Marcin Nabiałek ◽  
Bartłomiej Jeż ◽  
Katarzyna Błoch ◽  
Paweł Pietrusiewicz ◽  
Joanna Gondro
Keyword(s):  
Magnetic Properties ◽  
Amorphous Alloys ◽  
Cobalt Content ◽  
Iron Based
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