Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

2006 ◽  
Author(s):  
Antoine Cros ◽  
Krunoslav Romanjek ◽  
Dominique Fleury ◽  
Samuel Harrison ◽  
Robin Cerutti ◽  
...  
Keyword(s):  
Cmos Scaling ◽  
Mobility Degradation

Mobility degradation in gated Si:SiGe quantum wells with thermally grown oxides

1995 ◽  
Vol 31 (21) ◽  
pp. 1876-1878 ◽  
Author(s):  
R.S. Prasad ◽  
S. Kanjanachuchai ◽  
J. Fernández ◽  
T.J. Thornton ◽  
A. Matsumura
Keyword(s):  
Quantum Wells ◽  
Thermally Grown Oxides ◽  
Mobility Degradation ◽  
Thermally Grown

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

2008 ◽  
Vol 29 (5) ◽  
pp. 491-493 ◽  
Author(s):  
Xin Sun ◽  
Qiang Lu ◽  
V. Moroz ◽  
H. Takeuchi ◽  
G. Gebara ◽  
...  
Keyword(s):  
Cmos Scaling

(Invited) Advanced CMOS Scaling and FinFET Technology

2013 ◽  
Vol 50 (9) ◽  
pp. 3-16 ◽  
Author(s):  
E. J. Nowak
Keyword(s):  
Cmos Scaling

A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

2002 ◽  
Vol 49 (1) ◽  
pp. 82-88 ◽  
Author(s):  
F.J.G. Sanchez ◽  
A. Ortiz-Conde ◽  
A. Cerdeira ◽  
M. Estrada ◽  
D. Flandre ◽  
...  
Keyword(s):  
Series Resistance ◽  
Fully Depleted ◽  
Mobility Degradation

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

2010 ◽  
Vol 54 (9) ◽  
pp. 855-860 ◽  
Author(s):  
T. Chiarella ◽  
L. Witters ◽  
A. Mercha ◽  
C. Kerner ◽  
M. Rakowski ◽  
...  
Keyword(s):  
Cmos Scaling

High κ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy

2002 ◽  
Vol 745 ◽  
Author(s):  
J. Raynien Kwo ◽  
Minghwei Hong
Keyword(s):  
Physical Vapor Deposition ◽  
Gate Dielectrics ◽  
Compound Semiconductors ◽  
State Density ◽  
Dielectric Films ◽  
Gate Stacks ◽  
Materials Integration ◽  
Cmos Scaling ◽  
Atomic Precision ◽  
Critical Issues

ABSTRACTThe ability of controlling the growth and interfaces of ultrathin dielectric films on Si and compound semiconductors by ultrahigh vacuum physical vapor deposition has led to comprehensive studies of gate stacks employing the high κ gate oxide Ga2O3(Gd2O3), and the rare earth oxides Gd2O3 and Y2O3. The epitaxy and the interfaces of Gd2O3 on GaAs, GaN, and Si were characterized with atomic precision, and show strong tendency to conform to the underlying substrate, thus providing insight into the fundamental mechanism for low interfacial state density and effective passivation of GaAs and GaN surfaces. These Gd2O3 and Y2O3 gate stacks of abrupt interfaces and controlled microstructures were employed as a model system to elucidate critical issues of materials integration in CMOS scaling.

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

2008 ◽  
Author(s):  
Ahmad Ehteshamul Islam ◽  
Vrajesh D. Maheta ◽  
Hitesh Das ◽  
Souvik Mahapatra ◽  
Muhammad Ashraful Alam
Keyword(s):  
Interface Traps ◽  
Mobility Degradation
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