Trap-assisted tunneling in the reverse dark current of GaAlAsSb avalanche photodiodes

1981 ◽  
Author(s):  
R. Chin ◽  
N. Tabatabaie ◽  
G.E. Stillman
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

scholarly journals Trap-assisted tunneling in AlGaN avalanche photodiodes

AIP Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 065016 ◽  
Author(s):  
Z. G. Shao ◽  
Q. J. Gu ◽  
X. F. Yang ◽  
J. Zhang ◽  
Y. W. Kuang ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Analysis of dark current considering trap-assisted tunneling mechanism for InGaAs PIN photodetectors

2017 ◽  
Vol 49 (12) ◽  
Author(s):  
Xiaokai Ma ◽  
Yongqing Huang ◽  
Jiarui Fei ◽  
Qingtao Chen ◽  
Tao Liu ◽  
...  
Keyword(s):  
Dark Current ◽  
Tunneling Mechanism ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

Trap-Assisted Tunneling in MIS and Schottky Structures

1983 ◽  
Vol 79 (1) ◽  
pp. 223-236 ◽  
Author(s):  
F. Campabadal ◽  
V. Milian ◽  
X. Aymerich-Humet
Keyword(s):  
Trap Assisted Tunneling ◽  
Assisted Tunneling

scholarly journals Low dark current and high gain-bandwidth product of avalanche photodiodes: optimization and realization

2020 ◽  
Vol 28 (11) ◽  
pp. 16211
Author(s):  
Hui Wang ◽  
Xiaohong Yang ◽  
Rui Wang ◽  
Tingting He ◽  
Kaibao Liu
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gain Bandwidth

Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

2018 ◽  
Vol 16 (6) ◽  
pp. 060401 ◽  
Author(s):  
Xingye Zhou Xingye Zhou ◽  
Jia Li Jia Li ◽  
Weili Lu Weili Lu ◽  
Yuangang Wang Yuangang Wang ◽  
Xubo Song Xubo Song ◽  
...  
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Large Area ◽  
Ultraviolet Detection ◽  
Visible Blind
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