scholarly journals Pyroelectric Characteristics of 0-3 PbTiO3/P(VDF/TrFE) Nanocomposites Thin Films for Infrared Sensing

2006 ◽  
Author(s):  
Sung - Yeol Kwon
Keyword(s):  
Thin Films ◽  
Infrared Sensing ◽  
Pyroelectric Characteristics

scholarly journals High quality VO2 thin films synthesized from V2O5 powder for sensitive near-infrared detection

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Xitao Guo ◽  
Yonghao Tan ◽  
Yupei Hu ◽  
Zainab Zafar ◽  
Jun Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Infrared Detection ◽  
Ambient Conditions ◽  
High Quality ◽  
Resistance Change ◽  
Infrared Sensing ◽  
Intermediate Phases ◽  
Vo2 Thin Films ◽  
Transport Method

AbstractVapor transport method has been successfully used to synthesize high quality VO2 thin films on SiO2/Si substrate using V2O5 as a precursor in an inert-gas environment. The morphological and structural evolutions of the intermediate phases during the nucleation and growth processes were investigated by SEM and Raman spectroscopy, respectively. The results showed that the conversion of V2O5 powder to VO2 thin films was dominated by a melting-evaporation-nucleation-growth mechanism. Further characterization results demonstrated that the high quality crystals of monoclinic VO2 thin films exhibit a sharp resistance change up to 4 orders of magnitude. In addition, the VO2 thin films exhibited good near-infrared response, high stability, and reproducibility under ambient conditions, which should be promising for sensitive near-infrared detection. Our work not only provided a simple and direct approach to synthesize high quality VO2 thin films with distinct phase transition properties but also demonstrated the possible infrared sensing application in the future.

Exploring the infrared-sensing properties of polymorphous silicon-germanium (pm-SixGey:H) thin films

2014 ◽  
Vol 92 (7/8) ◽  
pp. 565-569 ◽  
Author(s):  
M. Moreno ◽  
A. Torres ◽  
C. Calleja ◽  
R. Ambrosio ◽  
P. Rosales ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Germanium ◽  
Infrared Detection ◽  
Thermal Coefficient ◽  
Ir Radiation ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Sensing Properties ◽  
Infrared Sensing ◽  
Thermal Coefficient Of Resistance

In this work we have performed an exploratory study of the infrared (IR) sensing properties of polymorphous silicon–germanium (pm-SixGey:H) thin films. Our objective was to study the characteristics that are important parameters for infrared detection, as activation energy (Ea), thermal coefficient of resistance (TCR), room temperature conductivity (σRT), and responsivity to IR radiation. After characterization, our results demonstrated that pm-SiGe:H films have advantages over a-Si:H,B, pm-Si:H, and pm-Ge:H, because of the possibility to tailor its properties as σRT, Ea, and TCR, and moreover, the possibility to adjust those values for specific applications.

Low noise and fast response of infrared sensing structures based on amorphous Y–Ba–Cu–O semiconducting thin films sputtered on silicon

2016 ◽  
Vol 617 ◽  
pp. 71-75 ◽  
Author(s):  
Alain J. Kreisler ◽  
Annick F. Dégardin ◽  
Xavier Galiano ◽  
David Alamarguy
Keyword(s):  
Thin Films ◽  
Fast Response ◽  
Low Noise ◽  
Infrared Sensing ◽  
Semiconducting Thin Films

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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