InGaN/GaN nanowire flexible light emitting diodes and photodetectors

2017 ◽  
Author(s):  
Nan Guan ◽  
Xing Dai ◽  
Hezhi Zhang ◽  
Lorenzo Mancini ◽  
Akanksha Kapoor ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Gan Nanowire

scholarly journals Photon-assisted tunneling in GaN nanowire white light emitting diodes

2009 ◽  
Vol 6 (S2) ◽  
pp. S538-S540 ◽  
Author(s):  
P.-C. Yeh ◽  
M.-C. Hwa ◽  
J.-W. Yu ◽  
H.-M. Wu ◽  
H.-L. Tsai ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Gan Nanowire ◽  
Assisted Tunneling ◽  
White Light Emitting Diodes

scholarly journals Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes

2020 ◽  
Vol 32 (10) ◽  
pp. 105202
Author(s):  
H Zhang ◽  
V Piazza ◽  
V Neplokh ◽  
N Guan ◽  
F Bayle ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Core Shell ◽  
Light Emitting ◽  
Gan Nanowire

GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

2009 ◽  
Vol 45 (1) ◽  
pp. 75 ◽  
Author(s):  
S.D. Hersee ◽  
M. Fairchild ◽  
A.K. Rishinaramangalam ◽  
M.S. Ferdous ◽  
L. Zhang ◽  
...  
Keyword(s):  
Growth Process ◽  
Light Emitting Diodes ◽  
Nanowire Growth ◽  
Light Emitting ◽  
Gan Nanowire

Packaging and interconnect technologies for the development of GaN nanowire-based light emitting diodes

2009 ◽  
Author(s):  
Myongjai Lee ◽  
Jen-Hau Cheng ◽  
Y. C. Lee ◽  
Dragos Seghete ◽  
Steven M. George ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Gan Nanowire

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3355-3359 ◽  
Author(s):  
Wei Guo ◽  
Meng Zhang ◽  
Animesh Banerjee ◽  
Pallab Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Catalyst Free ◽  
Gan Nanowire

scholarly journals Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

2019 ◽  
Vol 10 ◽  
pp. 1177-1187 ◽  
Author(s):  
David van Treeck ◽  
Johannes Ledig ◽  
Gregor Scholz ◽  
Jonas Lähnemann ◽  
Mattia Musolino ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Detection System ◽  
Accurate Determination ◽  
Analysis Tool ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Densities ◽  
Gan Nanowire ◽  
Measurement Approach

We present the combined analysis of electroluminescence (EL) and current–voltage (I–V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I–V characteristics are described well by a modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single-NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single-NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows for a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool.

scholarly journals Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

Nano Letters ◽  
2016 ◽  
Vol 16 (7) ◽  
pp. 4616-4623 ◽  
Author(s):  
Chao Zhao ◽  
Tien Khee Ng ◽  
Rami T. ElAfandy ◽  
Aditya Prabaswara ◽  
Giuseppe Bernardo Consiglio ◽  
...  
Keyword(s):  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Gan Nanowire

scholarly journals High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes

2020 ◽  
Vol 28 (1) ◽  
pp. 665 ◽  
Author(s):  
Barsha Jain ◽  
Ravi Teja Velpula ◽  
Ha Quoc Thang Bui ◽  
Hoang-Duy Nguyen ◽  
Trupti Ranjan Lenka ◽  
...  
Keyword(s):  
White Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Gan Nanowire ◽  
White Light Emitting Diodes
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