Monolithically Integrated Optical Packet Switches for High-Speed LANs

2006 ◽  
Author(s):  
Dan Yanson ◽  
John Marsh
Keyword(s):  
High Speed ◽  
Packet Switches ◽  
Monolithically Integrated ◽  
Integrated Optical

scholarly journals High-speed III-V nanowire photodetector monolithically integrated on Si

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Svenja Mauthe ◽  
Yannick Baumgartner ◽  
Marilyne Sousa ◽  
Qian Ding ◽  
Marta D. Rossell ◽  
...  
Keyword(s):  
High Speed ◽  
Light Emitting Diode ◽  
Spectral Response ◽  
Optical Data ◽  
Fully Integrated ◽  
Light Emitting ◽  
Optical Links ◽  
Monolithically Integrated ◽  
Integrated Optical ◽  
Local Integration

Abstract Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.

Development and fabrication of monolithically integrated optical packet switches

2007 ◽  
Vol 6 (2) ◽  
pp. 157
Author(s):  
Dan A. Yanson ◽  
Mark Silver ◽  
Omar Vassalli ◽  
Margaret Campbell ◽  
Graeme Masterton ◽  
...  
Keyword(s):  
Packet Switches ◽  
Monolithically Integrated ◽  
Integrated Optical
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