A high-speed four-channel integrated optical receiver array using SiGe HBT technology

2002 ◽  
Author(s):  
Sung Min Park ◽  
C. Toumazou ◽  
C. Papavassiliou
Keyword(s):  
High Speed ◽  
Optical Receiver ◽  
Sige Hbt ◽  
Receiver Array ◽  
Integrated Optical

A High-Speed CMOS Integrated Optical Receiver With an Under-Damped TIA

2015 ◽  
Vol 27 (13) ◽  
pp. 1367-1370 ◽  
Author(s):  
Hyun-Yong Jung ◽  
Jeong-Min Lee ◽  
Woo-Young Choi
Keyword(s):  
High Speed ◽  
Optical Receiver ◽  
Integrated Optical

High-Speed CMOS Integrated Optical Receiver With an Avalanche Photodetector

2009 ◽  
Vol 21 (20) ◽  
pp. 1553-1555 ◽  
Author(s):  
Jin-Sung Youn ◽  
Hyo-Soon Kang ◽  
Myung-Jae Lee ◽  
Kang-Yeob Park ◽  
Woo-Young Choi
Keyword(s):  
High Speed ◽  
Optical Receiver ◽  
Integrated Optical

Monolithic GaAs Integrated Optical Receiver For High Speed Interconnect Applications

1989 ◽  
Author(s):  
B. Brar ◽  
S. Beccue ◽  
M. K. Kilcoyne ◽  
K. Pedrotti ◽  
G. Robinson
Keyword(s):  
High Speed ◽  
Optical Receiver ◽  
Integrated Optical

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

High-speed optical receiver module fabrication using laser welding technique

2002 ◽  
Author(s):  
Seung Goo Kang ◽  
Min Kyu Song ◽  
Nam Hwang ◽  
Chan Yong Park ◽  
Hee Tae Lee ◽  
...  
Keyword(s):  
Laser Welding ◽  
High Speed ◽  
Optical Receiver ◽  
Receiver Module ◽  
Welding Technique
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