Impact of base doping profile on stability characteristics of SiGe HBTs

2006 ◽  
Author(s):  
Ningyue Jiang ◽  
Zhenqiang Ma
Keyword(s):  
Doping Profile ◽  
Base Doping

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

2009 ◽  
Vol 615-617 ◽  
pp. 829-832 ◽  
Author(s):  
Jian Hui Zhang ◽  
Leonid Fursin ◽  
Xue Qing Li ◽  
Xiao Hui Wang ◽  
Jian Hui Zhao ◽  
...  
Keyword(s):  
High Performance ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Bipolar Junction Transistor ◽  
Blocking Voltage ◽  
Junction Transistor ◽  
Dc Current ◽  
Base Doping

This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base and emitter epi-layers continuously grown in the same reactor. The 4H-SiC BJTs were designed to improve the common emitter current gain through the built-in electrical fields originating from the grading of the base doping. Continuously-grown epi-layers are also believed to be the key to increasing carrier lifetime and high current gains. The 4H-SiC BJT wafer was grown in an Aixtron/Epigress VP508, a horizontal hot-wall chemical vapor deposition reactor using standard silane/propane chemistry and nitrogen and aluminum dopants. High performance 4H-SiC BJTs based on this initial non-optimized graded base doping have been demonstrated, including a 4H-SiC BJT with a DC current gain of ~33, specific on-resistance of 2.9 mcm2, and blocking voltage VCEO of over 1000 V.

Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile

2018 ◽  
Vol 27 (10) ◽  
pp. 108502 ◽  
Author(s):  
Xi Wang ◽  
Hong-Bin Pu ◽  
Qing Liu ◽  
Li-Qi An
Keyword(s):  
Doping Profile ◽  
Turn On ◽  
Base Doping
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