Electron-beam-pulse induced time-domain depolarization in plasma deposited hydrogenated carbon-silicon films

2002 ◽  
Author(s):  
P. Kazimierski ◽  
J. Tyczkowski
Keyword(s):  
Electron Beam ◽  
Time Domain ◽  
Silicon Films ◽  
Electron Beam Pulse

Line-Shaped Electron Beam System and Soi Films Prepared by The System

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Hayafuji ◽  
A. Shibata ◽  
T. Yanada ◽  
A. Sawada ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Crystalline Silicon ◽  
Semiconductor Industry ◽  
High Energy ◽  
Silicon Films ◽  
High Energy Density ◽  
Present System ◽  
Single Crystalline ◽  
Beam System ◽  
Scanning Area

ABSTRACTThe line-shaped electron beam annealing system which generates an electron beam of a length of 4 cm and a width af less than 100 um with a high energy density exceeding well over 100 kW/cm2 was developed for the first time with a purpose of SOI processing as its primary application. An pccelaration voltage of up to 20 kV can be used in this system. Seeded single crystalline islands with areas several mm long and 30 to 100 um in width were obtained by a single scan of the electron beam. The electron beam is generated in a pulsed way in the system due to the power restriction of the power supplies. An area of 4×5 cm2 was processed by a single scan of an electron beam at a sample speed of 530 cm/sec and a beam duration of 9.5 msec. The scanning area for one scan is determined by the beam length and the duration of the beam and sample speed.The present system could give single crystalline silicon films without any grain boundaries. The electron mobility of the electron beam recrystallized films, obtained from FETs made as a vehicle to test the electrical properties of the films, was comparable to that of the bulk silicon. A very rapid migration of silicon atoms in solid polycrystalline silicon films, which is controllable by process parameters, was also found with a migration speed of the order of 1 m/sec in a capped structure. The present electron beam system is useful in studying basic mechanisms of crystal growth in thin films. The system can have a very high throughput, a desirable feature in semiconductor industry. The present system can also be used to study the rapid thermal treatment of materials other than semiconductors including rapidly solidified materials.

scholarly journals Supershort avalanche electron beam generation in gases

2008 ◽  
Vol 26 (4) ◽  
pp. 605-617 ◽  
Author(s):  
V.F. Tarasenko ◽  
E.H. Baksht ◽  
A.G. Burachenko ◽  
I.D. Kostyrya ◽  
M.I. Lomaev ◽  
...  
Keyword(s):  
High Pressure ◽  
Electron Beam ◽  
Atmospheric Pressure ◽  
Electron Beams ◽  
Solid Angle ◽  
Generation Mechanism ◽  
Full Width ◽  
Half Maximum ◽  
Electron Beam Pulse ◽  
Supershort Avalanche Electron Beam

AbstractThis paper reports on the properties of a supershort avalanche electron beam generated in the air or other gases under atmospheric pressure and gives the analysis of a generation mechanism of supershort avalanche electron beam, as well as methods of such electron beams registration. It is reported that in the air under the pressure of 1 atm, a supershort (<100 ps) avalanche electron beam is formed in the solid angle more than 2π steradian. The electron beam has been obtained behind a 45 µm thick Al-Be foil in SF6 and Xe under the pressure of 2 atm, and in He, under the pressure of about 15 atm. It is shown that in SF6 under the high pressure (>1 atm) duration (full width at half maximum) of supershort avalanche electron beam pulse is about 150 ps.

Crystallization of amorphous silicon films via electron beam exposure

2015 ◽  
Vol 16 (3) ◽  
pp. 169-174
Author(s):  
Byeong-Yeon Moon ◽  
Jung Su Kang ◽  
Seon Yong Park ◽  
Kyu Chang Park
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Silicon Films

Evolution of an electron beam pulse influenced by coulomb collision effects in the solar corona

2020 ◽  
Vol 65 (3) ◽  
pp. 1062-1069
Author(s):  
G.A. Casillas-Pérez ◽  
S. Jeyakumar ◽  
A. Carrillo-Vargas ◽  
H.R. Pérez-Enríquez
Keyword(s):  
Electron Beam ◽  
Solar Corona ◽  
Coulomb Collision ◽  
Electron Beam Pulse
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