Quasi-neutral Limit of the Drift-Diffusion Models for Semiconductors with PN-Junctions

2009 ◽  
Author(s):  
Shu Wang ◽  
Ke Wang
Keyword(s):  
Diffusion Models ◽  
Drift Diffusion ◽  
Pn Junctions

Quantum-corrected drift-diffusion models for transport in semiconductor devices

2005 ◽  
Vol 204 (2) ◽  
pp. 533-561 ◽  
Author(s):  
Carlo de Falco ◽  
Emilio Gatti ◽  
Andrea L. Lacaita ◽  
Riccardo Sacco
Keyword(s):  
Semiconductor Devices ◽  
Diffusion Models ◽  
Drift Diffusion

scholarly journals Quantum Energy-Transport and Drift-Diffusion Models

2005 ◽  
Vol 118 (3-4) ◽  
pp. 625-667 ◽  
Author(s):  
Pierre Degond ◽  
Florian M�hats ◽  
Christian Ringhofer
Keyword(s):  
Energy Transport ◽  
Diffusion Models ◽  
Drift Diffusion ◽  
Quantum Energy

scholarly journals Improving parameter recovery for conflict drift-diffusion models

2020 ◽  
Vol 52 (5) ◽  
pp. 1848-1866
Author(s):  
Ronald Hübner ◽  
Thomas Pelzer
Keyword(s):  
Goodness Of Fit ◽  
Drift Rate ◽  
Complex Model ◽  
Diffusion Models ◽  
Necessary Condition ◽  
Grid Search ◽  
Drift Diffusion ◽  
Specific Criterion ◽  
Parameter Recovery ◽  
Parameter Values

Abstract Several drift-diffusion models have been developed to account for the performance in conflict tasks. Although a common characteristic of these models is that the drift rate changes within a trial, their architecture is rather different. Comparative studies usually examine which model fits the data best. However, a good fit does not guarantee good parameter recovery, which is a necessary condition for a valid interpretation of any fit. A recent simulation study revealed that recovery performance varies largely between models and individual parameters. Moreover, recovery was generally not very impressive. Therefore, the aim of the present study was to introduce and test an improved fit procedure. It is based on a grid search for determining the initial parameter values and on a specific criterion for assessing the goodness of fit. Simulations show that not only the fit performance but also parameter recovery improved substantially by applying this procedure, compared to the standard one. The improvement was largest for the most complex model.

scholarly journals Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device

2011 ◽  
Vol 03 (10) ◽  
pp. 423-429 ◽  
Author(s):  
Samir Labiod ◽  
Saida Latreche ◽  
Mourad Bella ◽  
Christian Gontrand
Keyword(s):  
Semiconductor Device ◽  
Diffusion Models ◽  
Drift Diffusion
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