scholarly journals Reduced dimensionality in drift-diffusion models of back-contact solar cells and scanning photocurrent microscopy

2017 ◽  
Vol 122 (13) ◽  
pp. 133106 ◽  
Author(s):  
Robin D. Lamboll ◽  
Neil C. Greenham
Keyword(s):  
Solar Cells ◽  
Diffusion Models ◽  
Back Contact ◽  
Drift Diffusion ◽  
Reduced Dimensionality ◽  
Scanning Photocurrent Microscopy

Using Drift-Diffusion Models as a Tool to Probe the Physics of Perovskite Solar Cells

2019 ◽  
Author(s):  
Giles Richardson ◽  
Nicola Courtier ◽  
Laurence Bennett ◽  
Juan Anta ◽  
Antonio Exposito
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Diffusion Models ◽  
Drift Diffusion

Optimized analysis of back-contact perovskite solar cells architectures

Optik ◽  
2020 ◽  
Vol 207 ◽  
pp. 164362 ◽  
Author(s):  
Guochuan Fang ◽  
Hanmin Tian ◽  
Weihong Chang ◽  
Zheng Wang ◽  
Quanmin He ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Back Contact

Engineering the Band Offsets at the Back Contact Interface for Efficient Kesterite CZTSSe Solar Cells

2020 ◽  
Vol 3 (11) ◽  
pp. 10976-10982
Author(s):  
Afei Zhang ◽  
Zhaoyang Song ◽  
Zhengji Zhou ◽  
Yueqing Deng ◽  
Wenhui Zhou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Back Contact ◽  
Contact Interface ◽  
Band Offsets

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

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