Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications

2014 ◽  
Author(s):  
Young Jun Yoon ◽  
Jae Hwa Seo ◽  
Hwan Gi Lee ◽  
Gwan Min Yoo ◽  
Young Jae Kim ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Energy System ◽  
Green Energy ◽  
Effect Transistor

scholarly journals Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

2013 ◽  
Vol 103 (14) ◽  
pp. 143102 ◽  
Author(s):  
Katsuhiko Nishiguchi ◽  
Hiroshi Yamaguchi ◽  
Akira Fujiwara ◽  
Herre S. J. van der Zant ◽  
Gary A. Steele
Keyword(s):  
Radio Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Wide Bandwidth ◽  
Radio Frequency Field ◽  
Frequency Field ◽  
Effect Transistor

scholarly journals Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 479 ◽  
Author(s):  
Shunwei Zhu ◽  
Hujun Jia ◽  
Xingyu Wang ◽  
Yuan Liang ◽  
Yibo Tong ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Buffer Layer ◽  
High Power ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Design System ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
Rf Performance

An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency.

Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor

2004 ◽  
Vol 84 (3) ◽  
pp. 419-421 ◽  
Author(s):  
B. E. Kardynał ◽  
A. J. Shields ◽  
N. S. Beattie ◽  
I. Farrer ◽  
K. Cooper ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Radio Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Photon Counting ◽  
Low Noise ◽  
Effect Transistor

Heteromaterial Gate Tunneling Field-Effect Transistor for High-Speed and Radio-Frequency Applications

2014 ◽  
Vol 14 (11) ◽  
pp. 8136-8140 ◽  
Author(s):  
Young Jun Yoon ◽  
Jae Hwa Seo ◽  
Eou-Sik Cho ◽  
Jung-Hee Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Gate Tunneling
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