Finite difference approach for self-consistent solution in strained and strain balanced SiGe/GeSn quantum well

Author(s):  
Prakash Pareek ◽  
Mukul K Das
Author(s):  
M.S. Mironova ◽  
V.I. Zubkov ◽  
A.L. Dudin ◽  
G.F. Glinskii

AbstractWe performed numerical self-consistent solution of Schrödinger and Poisson equations for GaAs/InGaAs/AlGaAs pHEMT structures with quantum well. Based on the results we calculated optical transition matrix elements and photoluminescence spectra of such structures with the same design and different parameters (such as doping level and epitaxial layers width). In the photoluminescence spectra calculations three fitting parameters have been used. These parameters are GaAs/InGaAs valence band offset in strained quantum well, hole quasi Fermi level and inhomogeneous broadening. The PL peaks amplitudes and positions dependencies on the structure parameters were established. These dependencies can be used as the basis for pHEMT structure non-destructive diagnostics.


1995 ◽  
Vol 10 (5) ◽  
pp. 577-585 ◽  
Author(s):  
C Presilla ◽  
V Emiliani ◽  
A Frova

1988 ◽  
Vol 03 (03) ◽  
pp. 295-301 ◽  
Author(s):  
A.P. CONTOGOURIS ◽  
N. MEBARKI ◽  
D. ATWOOD ◽  
H. TANAKA

Possible strong interaction effects arising when the Higgs mass MH is sufficiently large are investigated in the system of interacting Higgs, using dispersion relations (N/D method). A simple model indicates that for MH≳1 TeV several such effects are present: an 1=0 bound state, large s-wave phase shifts and a resonance-like state. In the range 1.5≲MH≲3.5 TeV the above bound state amounts to an approximate bootstrap (self-consistent) solution for the Higgs with respect to both its mass and coupling. Other aspects of the H-H strong interaction system are also investigated.


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