Simulation of the capacitance–voltage characteristics of a single‐quantum‐well structure based on the self‐consistent solution of the Schrödinger and Poisson equations

1996 ◽  
Vol 80 (2) ◽  
pp. 864-871 ◽  
Author(s):  
P. N. Brounkov ◽  
T. Benyattou ◽  
G. Guillot
Keyword(s):  
Quantum Well ◽  
The Self ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Poisson Equations ◽  
Quantum Well Structure ◽  
Capacitance Voltage ◽  
Self Consistent ◽  
Consistent Solution

Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique

1993 ◽  
Vol 74 (12) ◽  
pp. 7618-7620 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
G. Fernandes ◽  
S. Banerjee
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Capacitance Voltage

scholarly journals The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure

2021 ◽  
Vol 602 ◽  
pp. 412487
Author(s):  
M. Gunes ◽  
O. Donmez ◽  
C. Gumus ◽  
A. Erol ◽  
H. Alghamdi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Band Alignment ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure

Disordering of the ZnCdSe single quantum well structure by Cd diffusion

1996 ◽  
Vol 69 (23) ◽  
pp. 3572-3574 ◽  
Author(s):  
M. Momose ◽  
A. Taike ◽  
M. Kawata ◽  
J. Gotoh ◽  
S. Nakatsuka
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure

Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrödinger and Poisson Equations

1999 ◽  
Vol 592 ◽  
Author(s):  
C. Raynaud ◽  
J.L. Autran ◽  
P. Masson ◽  
M. Bidaud ◽  
A. Poncet
Keyword(s):  
Quantum Effect ◽  
Mesh Size ◽  
Oxide Semiconductor ◽  
Uniform Mesh ◽  
Poisson Equations ◽  
Capacitance Voltage ◽  
Self Consistent ◽  
Consistent Solution ◽  
The One ◽  
Mos Device

ABSTRACTThe one-dimensional Schridinger and Poisson equations have been numerically solved in metal-oxide-semiconductor devices using a three-point finite difference scheme with a non-uniform mesh size. The capacitance-voltage characteristic of the structure has been calculated via this self-consistent approach and results have been compared with data obtained from the resolution of Poisson equation using different approximated methods based on the Boltzmann statistic with and without a first order quantum effect correction or the exact Fermi-Dirac statistic. The present work permits to evaluate and quantify the errors made by these approximations in determining the thickness of ultra-thin oxides.

High Efficiency Red Phosphorescent Organic Light Emitting Diodes with Single Quantum Well Structure

2010 ◽  
Vol 530 (1) ◽  
pp. 131/[287]-136/[292]
Author(s):  
Jung Soo Park ◽  
Tae Jin Park ◽  
Woo Sik Jeon ◽  
Gyeong Heon Kim ◽  
Jae Hyung Yu ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Quantum Well Structure ◽  
Organic Light

single quantum well structure analysed by reflectance and photoluminescence

1990 ◽  
Vol 8 (4) ◽  
pp. 433-437 ◽  
Author(s):  
A. Hameury ◽  
G. Chassaing ◽  
M. Sigrist ◽  
C. Deparis ◽  
J. Massies
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure
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