A Low Power V-band Low Noise Amplifier Using 0.13-¿m CMOS Technology

2007 ◽  
Author(s):  
Chung-Yu Wu ◽  
Po-Hung Chen
Keyword(s):  
Low Power ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
V Band ◽  
Noise Amplifier

scholarly journals Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Wide Band ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Active Inductor ◽  
Chip Area ◽  
Noise Amplifier

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  

A low-power V-band CMOS low-noise amplifier using current-sharing technique

2008 ◽  
Vol 50 (7) ◽  
pp. 1876-1879 ◽  
Author(s):  
Hong-Yu Yang ◽  
Yo-Sheng Lin ◽  
Chi Chen Chen
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
V Band ◽  
Current Sharing ◽  
Noise Amplifier

scholarly journals A Wideband Low Power Low-Noise Amplifier in CMOS Technology

2010 ◽  
Vol 57 (4) ◽  
pp. 773-782 ◽  
Author(s):  
Ali Meaamar ◽  
Chirn Chye Boon ◽  
Kiat Seng Yeo ◽  
Manh Anh Do
Keyword(s):  
Low Power ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier
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