A low-power V-band CMOS low-noise amplifier using current-sharing technique

2008 ◽  
Vol 50 (7) ◽  
pp. 1876-1879 ◽  
Author(s):  
Hong-Yu Yang ◽  
Yo-Sheng Lin ◽  
Chi Chen Chen
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
V Band ◽  
Current Sharing ◽  
Noise Amplifier

Low-Power, High-Gain V-Band CMOS Low Noise Amplifier for Microwave Radiometer Applications

2011 ◽  
Vol 21 (2) ◽  
pp. 104-106 ◽  
Author(s):  
Chun-Chieh Huang ◽  
Hsin-Chih Kuo ◽  
Tzuen-Hsi Huang ◽  
Huey-Ru Chuang
Keyword(s):  
Low Power ◽  
Microwave Radiometer ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
V Band ◽  
Noise Amplifier

Tunable Low-Power Low-Noise Amplifier for Healthcare Applications

2021 ◽  
Author(s):  
Rafael Vieira ◽  
Nuno Horta ◽  
Nuno Lourenço ◽  
Ricardo Póvoa
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Healthcare Applications ◽  
Noise Amplifier

scholarly journals A 219-µW ultra-low power low-noise amplifier for IEEE 802.15.4 based battery powered, portable, wearable IoT applications

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
S. Chrisben Gladson ◽  
Adith Hari Narayana ◽  
V. Thenmozhi ◽  
M. Bhaskar
Keyword(s):  
Low Power ◽  
Ieee 802.15.4 ◽  
Low Voltage ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Process Technology ◽  
Ultra Low Power ◽  
Power Mode ◽  
Noise Amplifier

AbstractDue to the increased processing data rates, which is required in applications such as fifth-generation (5G) wireless networks, the battery power will discharge rapidly. Hence, there is a need for the design of novel circuit topologies to cater the demand of ultra-low voltage and low power operation. In this paper, a low-noise amplifier (LNA) operating at ultra-low voltage is proposed to address the demands of battery-powered communication devices. The LNA dual shunt peaking and has two modes of operation. In low-power mode (Mode-I), the LNA achieves a high gain ($$S21$$ S 21 ) of 18.87 dB, minimum noise figure ($${NF}_{min.}$$ NF m i n . ) of 2.5 dB in the − 3 dB frequency range of 2.3–2.9 GHz, and third-order intercept point (IIP3) of − 7.9dBm when operating at 0.6 V supply. In high-power mode (Mode-II), the achieved gain, NF, and IIP3 are 21.36 dB, 2.3 dB, and 13.78dBm respectively when operating at 1 V supply. The proposed LNA is implemented in UMC 180 nm CMOS process technology with a core area of $$0.40{\mathrm{ mm}}^{2}$$ 0.40 mm 2 and the post-layout validation is performed using Cadence SpectreRF circuit simulator.

Low power active shunt feedback CMOS low noise amplifier for wideband wireless systems

Integration ◽  
2019 ◽  
Vol 69 ◽  
pp. 189-197 ◽  
Author(s):  
Asieh Parhizkar Tarighat ◽  
Mostafa Yargholi
Keyword(s):  
Low Power ◽  
Wireless Systems ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier
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