Reconfiguration of Bulk Acoustic Wave Filters: Application to WLAN 802.11b/g (2.40-2.48 GHz)

2006 ◽  
Author(s):  
M. El Hassan ◽  
E. Kerherve ◽  
Y. Deval ◽  
A. A. Shirakawa ◽  
D. Belot
Keyword(s):  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Wave Filters

Thin film bulk acoustic wave filters with ring-dot electrodes

2018 ◽  
Vol 19 (10) ◽  
pp. 786-795 ◽  
Author(s):  
Jing Liu ◽  
Jian-ke Du ◽  
Ji Wang ◽  
Jia-shi Yang
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Film Bulk ◽  
Wave Filters

Solidly mounted bulk acoustic wave filters for the GHz frequency range

2003 ◽  
Author(s):  
H.P. Loebl ◽  
C. Metzmacher ◽  
D.N. Peligrad ◽  
R. Mauczok ◽  
M. Klee ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Frequency Range ◽  
Wave Filters

Fabrication of single crystalline LiNbO3 thin films for wideband bulk acoustic wave filters

2020 ◽  
Vol 10 (9) ◽  
pp. 1504-1510
Author(s):  
Ying Xing ◽  
Yao Shuai ◽  
Xiaoxue Wang ◽  
Lu Lv ◽  
Xiaoyuan Bai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Acoustic Wave ◽  
Ion Irradiation ◽  
Wide Band ◽  
Bulk Acoustic Wave ◽  
Single Crystalline ◽  
Band Filter ◽  
Wave Filters ◽  
Baw Filter

Single crystalline lithium niobate (LN) thin films with a Y43-cut are fabricated by crystal-ion-slicing technique, and the B-staged benzocyclobutene (BCB) polymer is used as the bonding medium for the transferring of the LN thin film on to a homogeneous LN substrate. The thickness of the LN film is about 910 nm, and low energy ion irradiation is used to treat the surface of the film, which reduces the roughness from 12.4 nm down to 3.6 nm. Bulk acoustic wave (BAW) resonator is fabricated based on the thin LN layer, and the electromechanical coefficient (k2t) of the LN film reaches 16.3%. A 3-stage BAW filter is obtained, and the 3 dB bandwidth of the filter is 8.5%, demonstrating the single crystalline LN thin film with large k2t is promising for wide band filter.

Wafer Level Chip Size Packaging Technology for Bulk Acoustic Wave Filters

2007 ◽  
Vol 990 ◽  
Author(s):  
Hajime Yamada ◽  
Naoko Aizawa ◽  
Hiroyuki Fujino ◽  
Yoshihiro Koshido ◽  
Yukio Yoshino
Keyword(s):  
Acoustic Wave ◽  
Flip Chip ◽  
Bulk Acoustic Wave ◽  
Wafer Level ◽  
Copper Electroplating ◽  
Solder Bumps ◽  
Hermetic Seal ◽  
Via Holes ◽  
Chip Size ◽  
Wave Filters

ABSTRACTWafer level chip size packages (WL-CSP) have been successfully fabricated for bulk acoustic wave (BAW) filters. WL-CSP has been completed at the wafer level prior to dicing. Two silicon wafers are used as a die and a lid for chip size packaging. Both device and lid wafers have the same expansion coefficient and the package is strong enough to withstand the thermal stress. The package has a hermetic seal with copper-tin intermetallic bonding. The bonded wafers are then thinned by grinding. Via holes are formed by reactive ion etching (RIE) and filled by copper electroplating. The package has solder bumps on each terminal, ready for flip-chip assembly. We have succeeded to produce CSP-BAW filters with a hermetically sealed cavity, which is 840 micrometers squared and 280 micrometers in height including solder bumps.

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