F/sub T/-integrator in digital CMOS process for continuous-time ΣΔ modulator

2003 ◽  
Author(s):  
P. Khumsat ◽  
A. Worapishet ◽  
A. Burdett
Keyword(s):  
Continuous Time ◽  
Cmos Process ◽  
Digital Cmos ◽  
Σδ Modulator

scholarly journals An Auto-Tuning Continuous-Time Bandpass Sigma-Delta Modulator with Signal Observation for MEMS Gyroscope Readout Systems

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 1973
Author(s):  
Chunge Ju ◽  
Xiang Li ◽  
Junjun Zou ◽  
Qi Wei ◽  
Bin Zhou ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Input Signal ◽  
Continuous Time ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Sigma Delta ◽  
Mems Gyroscope ◽  
Auto Tuning ◽  
Σδ Modulator

This paper presents the design and implementation of an auto-tuning continuous-time bandpass sigma-delta (ΣΔ) modulator for micro-electromechchanical systems (MEMS) gyroscope readout systems. Its notch frequency can well match the input signal frequency by adding a signal observation to the traditional ΣΔ modulator. The filter of the observation adopts the same architecture as that of the traditional ΣΔ modulator, allowing the two filters to have the same response to input signal change, which is converted into a control voltage on metal-oxide semiconductor (MOS) resistance in the filters. The automatic tuning not only works to solve the mismatch problem caused by process error and temperature variation, but can also be applied to the interface circuit of gyroscopes with different resonant frequencies. The circuit is implemented in a 0.18-μm complementary metal-oxide semiconductor (CMOS) process with a core area of 2.4 mm2. The improved modulator achieves a dynamic range of 106 dB, a noise floor below 120 dB and a maximum signal-to-noise and distortion ratio (SNDR) of 86.4 dB. The tuning capability of the chip is relatively stable under input signals from 6 to 15 kHz at temperatures ranging from −45 to 60 °C.

scholarly journals NANO-studio, the design environment of filter banks implemented in standard CMOS technology

2021 ◽  
Author(s):  
Andrzej Handkiewicz ◽  
Mariusz Naumowicz
Keyword(s):  
Impulse Response ◽  
Filter Banks ◽  
Finite Impulse Response ◽  
Infinite Impulse Response ◽  
Cmos Process ◽  
Digital Cmos ◽  
Additional Advantage ◽  
Analysis And Synthesis ◽  
Optimization Parameters ◽  
Synthesis Filter

AbstractThe paper presents a method of optimizing frequency characteristics of filter banks in terms of their implementation in digital CMOS technologies in nanoscale. Usability of such filters is demonstrated by frequency-interleaved (FI) analog-to-digital converters (ADC). An analysis filter present in these converters was designed in switched-current technique. However, due to huge technological pitch of standard digital CMOS process in nanoscale, its characteristics substantially deviate from the required ones. NANO-studio environment presented in the paper allows adjustment, with transistor channel sizes as optimization parameters. The same environment is used at designing a digital synthesis filter, whereas optimization parameters are input and output conductances, gyration transconductances and capacitances of a prototype circuit. Transition between analog s and digital z domains is done by means of bilinear transformation. Assuming a lossless gyrator-capacitor (gC) multiport network as a prototype circuit, both for analysis and synthesis filter banks in FI ADC, is an implementation of the strategy to design filters with low sensitivity to parameter changes. An additional advantage is designing the synthesis filter as stable infinite impulse response (IIR) instead of commonly used finite impulse response (FIR) filters. It provides several dozen-fold saving in the number of applied multipliers.. The analysis and synthesis filters in FI ADC are implemented as filter pairs. An additional example of three-filter bank demonstrates versatility of NANO-studio software.

LOW-POWER, PARALLEL INTERFACE WITH CONTINUOUS-TIME ADAPTIVE PASSIVE EQUALIZER AND CROSSTALK CANCELLATION

2005 ◽  
Vol 15 (02) ◽  
pp. 459-476
Author(s):  
C. PATRICK YUE ◽  
JAEJIN PARK ◽  
RUIFENG SUN ◽  
L. RICK CARLEY ◽  
FRANK O'MAHONY
Keyword(s):  
Low Power ◽  
Electromagnetic Interference ◽  
Continuous Time ◽  
High Speed ◽  
High Performance ◽  
Process Variations ◽  
Cmos Process ◽  
Power Circuit ◽  
Crosstalk Cancellation ◽  
Circuit Components

This paper presents the low-power circuit techniques suitable for high-speed digital parallel interfaces each operating at over 10 Gbps. One potential application for such high-performance I/Os is the interface between the channel IC and the magnetic read head in future compact hard disk systems. First, a crosstalk cancellation technique using a novel data encoding scheme is introduced to suppress electromagnetic interference (EMI) generated by the adjacent parallel I/Os . This technique is implemented utilizing a novel 8-4-PAM signaling with a data look-ahead algorithm. The key circuit components in the high-speed interface transceiver including the receive sampler, the phase interpolator, and the transmitter output driver are described in detail. Designed in a 0.13-μm digital CMOS process, the transceiver consumes 310 mW per 10-Gps channel from a I-V supply based on simulation results. Next, a 20-Gbps continuous-time adaptive passive equalizer utilizing on-chip lumped RLC components is described. Passive equalizers offer the advantages of higher bandwidth and lower power consumption compared with conventional designs using active filter. A low-power, continuous-time servo loop is designed to automatically adjust the equalizer frequency response for the optimal gain compensation. The equalizer not only adapts to different channel characteristics, but also accommodates temperature and process variations. Implemented in a 0.25-μm, 1P6M BiCMOS process, the equalizer can compensate up to 20 dB of loss at 10 GHz while only consumes 32 mW from a 2.5-V supply.

LOW POWER CONTINUOUS TIME COMMON MODE SENSING FOR COMMON MODE FEEDBACK CIRCUITS

2010 ◽  
Vol 19 (03) ◽  
pp. 519-528 ◽  
Author(s):  
M. PRAMOD ◽  
T. LAXMINIDHI
Keyword(s):  
Continuous Time ◽  
Input Impedance ◽  
Cmos Process ◽  
High Input ◽  
High Input Impedance ◽  
Common Mode ◽  
Standby Power ◽  
Low Distortion ◽  
Simulation Results ◽  
Feedback Circuits

Continuous common mode feedback (CMFB) circuits having high input impedance and low distortion are proposed. The proposed circuits are characterized for 0.18 μm CMOS process with 1.8 V supply. Simulation results indicate that the proposed common mode detector consumes no standby power and CMFB circuit consumes 27–34% less power than previous high swing CMFB circuits.

Design Methodologies for Low-Power CMOS Operational Amplifiers in a 0.25¿m Digital CMOS Process

2006 ◽  
Author(s):  
Alfonso Cesar B. Albason ◽  
Neil Michael L. Axalan ◽  
Maria Theresa A. Gusad ◽  
John Richard E. Hizon ◽  
Marc D. Rosales
Keyword(s):  
Low Power ◽  
Operational Amplifiers ◽  
Cmos Process ◽  
Digital Cmos ◽  
Design Methodologies ◽  
Low Power Cmos ◽  
Cmos Operational Amplifiers
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