New three dimensional (3D) memory array architecture for future ultra high density DRAM (invited)

2003 ◽  
Author(s):  
F. Masuoka ◽  
T. Endoh ◽  
H. Sakuraba
Keyword(s):  
Three Dimensional ◽  
High Density ◽  
Memory Array ◽  
Array Architecture ◽  
3D Memory

New three-dimensional memory array architecture for future ultrahigh-density DRAM

1999 ◽  
Vol 34 (4) ◽  
pp. 476-483 ◽  
Author(s):  
T. Endoh ◽  
K. Shinmei ◽  
H. Sakuraba ◽  
F. Masuoka
Keyword(s):  
Three Dimensional ◽  
Memory Array ◽  
Array Architecture ◽  
Ultrahigh Density

Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer)

2012 ◽  
Vol E95.C (5) ◽  
pp. 837-841 ◽  
Author(s):  
Se Hwan PARK ◽  
Yoon KIM ◽  
Wandong KIM ◽  
Joo Yun SEO ◽  
Hyungjin KIM ◽  
...  
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Memory Array

scholarly journals Evidence of Three-Dimensional Asymmetries Seeded by High-Density Carbon-Ablator Nonuniformity in Experiments at the National Ignition Facility

2021 ◽  
Vol 126 (2) ◽  
Author(s):  
D. T. Casey ◽  
B. J. MacGowan ◽  
J. D. Sater ◽  
A. B. Zylstra ◽  
O. L. Landen ◽  
...  
Keyword(s):  
Three Dimensional ◽  
High Density ◽  
National Ignition Facility

scholarly journals A Review on the Fabrication and Reliability of Three-Dimensional Integration Technologies for Microelectronic Packaging: Through-Si-Via and Solder Bumping Process

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1664
Author(s):  
Do Hoon Cho ◽  
Seong Min Seo ◽  
Jang Baeg Kim ◽  
Sri Harini Rajendran ◽  
Jae Pil Jung
Keyword(s):  
High Speed ◽  
High Performance ◽  
New Technologies ◽  
Three Dimensional ◽  
High Density ◽  
Internal Stresses ◽  
Deep Reactive Ion Etching ◽  
Fifth Generation ◽  
Precise Understanding ◽  
Fabrication Defects

With the continuous miniaturization of electronic devices and the upcoming new technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation cellular networks (5G), etc., the electronics industry is achieving high-speed, high-performance, and high-density electronic packaging. Three-dimensional (3D) Si-chip stacking using through-Si-via (TSV) and solder bumping processes are the key interconnection technologies that satisfy the former requirements and receive the most attention from the electronic industries. This review mainly includes two directions to get a precise understanding, such as the TSV filling and solder bumping, and explores their reliability aspects. TSV filling addresses the DRIE (deep reactive ion etching) process, including the coating of functional layers on the TSV wall such as an insulating layer, adhesion layer, and seed layer, and TSV filling with molten solder. Solder bumping processes such as electroplating, solder ball bumping, paste printing, and solder injection on a Cu pillar are discussed. In the reliability part for TSV and solder bumping, the fabrication defects, internal stresses, intermetallic compounds, and shear strength are reviewed. These studies aimed to achieve a robust 3D integration technology effectively for future high-density electronics packaging.

Three-Dimensional Magneto-Optical Recording

2004 ◽  
Vol 834 ◽  
Author(s):  
Akiyoshi Itoh
Keyword(s):  
Storage System ◽  
Three Dimensional ◽  
Optical Recording ◽  
High Density ◽  
The Novel ◽  
National Project ◽  
3 Dimensional ◽  
Disk Storage ◽  
High Density Recording ◽  
New Type

ABSTRACTIn this report, the newly developed three-dimensional magneto-optical (MO) recording scheme and the experimental results are reported. A part of this work has been done as the national project of 3D-MO (3-dimensional MO) project. It started at September 1998 and ended March 2002 as a part of the national project “Nanometer-Scale Optical High Density Disk Storage System” and aimed at achieving 100 Gb/in2 in storage density. Three-dimensional MO recording is one of the prosperous candidates of next generation ultra high density recording. Magnetic amplifying MO system (MAMMOS) is employed for achieving the novel three-dimensional MO recording. Double-MAMMOS scheme consists of 2-recording layers of differing compensation temperature (Tcomp ) and one readout layer was proposed and discussed.With write/read test it is succeeded to show the results corresponding to a 100 Gb/in2 (50 Gb/in2 × 2) recording density. We also proposed and showed results of simulations of a new type of Double-MAMMOS in which the recording layers can hold quadri-valued information by single writing process.

Design of Side Bottom-Electrode-Contact for High Density Phase-Change Memory Array

2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
High Density ◽  
Memory Array ◽  
Electrode Contact ◽  
Change Memory

scholarly journals Three-dimensional high-density co-culture with primary tenocytes induces tenogenic differentiation in mesenchymal stem cells

2011 ◽  
Vol 29 (9) ◽  
pp. 1351-1360 ◽  
Author(s):  
Philipp R. A. Schneider ◽  
Constanze Buhrmann ◽  
Ali Mobasheri ◽  
Ulrike Matis ◽  
Mehdi Shakibaei
Keyword(s):  
Stem Cells ◽  
Mesenchymal Stem Cells ◽  
Three Dimensional ◽  
High Density ◽  
Tenogenic Differentiation
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