Measurement of junction temperature in heterojunction bipolar transistors

2002 ◽  
Author(s):  
Yang-Hua Chang ◽  
Ying-Yih Wu
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Junction Temperature

scholarly journals Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor

2001 ◽  
Vol 24 (4) ◽  
pp. 265-287
Author(s):  
K. F. Yarn ◽  
K. H. Ho
Keyword(s):  
Frequency Response ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Carrier Transport ◽  
Bipolar Transistors ◽  
Junction Temperature ◽  
Current Gain ◽  
Material System ◽  
Current Voltage ◽  
Analytical Thermal Model

Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities. In this paper, a numerical model based on the Npn AlGaAs/GaAs HBT structure for the carrier transport is presented. Three figures of merit on device operation, current gain, cut-off frequency and maximum oscillation frequency are calculated. Besides, thermal instability plays an important role on power HBT resulted from the low thermal conductivity in GaAs. The generated heat will increase the junction temperature and cause self-destruction. Therefore, the thermal runaway study of the junction temperature, current–voltage (IV) characteristics and frequency response using an analytical thermal model is described.

Uniform junction temperature AlGaAs/GaAs power heterojunction bipolar transistors on silicon substrates

1991 ◽  
Vol 58 (10) ◽  
pp. 1068-1070 ◽  
Author(s):  
Guang‐bo Gao ◽  
Zhi‐fang Fan ◽  
D. L. Blackburn ◽  
M. S. Ünlü ◽  
J. Chen ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Junction Temperature ◽  
Silicon Substrates

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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