A Wide-Band 2π Equivalent-Circuit Model for Spiral Inductors on Silicon

2006 ◽  
Author(s):  
Xiang-zhan Wang ◽  
Jun Ren ◽  
Fan Yang ◽  
Wei Zheng ◽  
Qi Yu ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Wide Band ◽  
Circuit Model ◽  
Spiral Inductors

Analysis of Waveguide Slot-Based Structures Using Wide-Band Equivalent-Circuit Model

2004 ◽  
Vol 52 (12) ◽  
pp. 2691-2696 ◽  
Author(s):  
I.A. Eshrah ◽  
A.A. Kishk ◽  
A.B. Yakovlev ◽  
A.W. Glisson ◽  
C.E. Smith
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Wide Band ◽  
Circuit Model ◽  
Waveguide Slot

A Wideband Predictive “Double-$\pi$” Equivalent-Circuit Model for On-Chip Spiral Inductors

2009 ◽  
Vol 56 (4) ◽  
pp. 609-619 ◽  
Author(s):  
Chuan Wang ◽  
Huailin Liao ◽  
Chen Li ◽  
Ru Huang ◽  
Waisum Wong ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Spiral Inductors ◽  
On Chip

Novel Equivalent Circuit Model for Spiral Inductors on Lossy Silicon Substrate

2013 ◽  
Vol 300-301 ◽  
pp. 1003-1007
Author(s):  
Juan Zou ◽  
Zhe Nan Tang
Keyword(s):  
Equivalent Circuit ◽  
Silicon Substrate ◽  
Equivalent Circuit Model ◽  
Magnetic Coupling ◽  
Cmos Technology ◽  
Circuit Model ◽  
Lateral Resistance ◽  
Proposed Model ◽  
Spiral Inductors ◽  
Numerical Formulation

Abstract. A fast and accurate equivalent circuit model for spiral inductors on lossy silicon substrate is presented and the parameters of the model are extracted without applying any fitting and optimized methods. In this model, the lateral resistance and inductance of substrate are introduced to model the eddy-current losses induced by magnetic coupling between the spiral and the substrate. FastHenry method is used to extract the inductances of spiral, substrate, and the mutual inductance between them. A numerical formulation is used to efficiently capture the proximity and skin effects in metal tracks. The proposed model is used to predict the performance of two typical spiral inductors fabricated in CMOS technology. The model shows excellent accuracy and efficiency by the comparison with measure results at the frequency from 100MHz to 10GHz.

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