RoDaFlow: A framework for development of dataflow network agents in Smart-M3 with substitution method

2013 ◽  
Author(s):  
Denis Laure ◽  
Ilya Paramonov
Keyword(s):  
Substitution Method

CdS thin films on LiNbO3 (104) and silicon (111) substrates prepared through an atom substitution method

2011 ◽  
Vol 184 (3) ◽  
pp. 725-728 ◽  
Author(s):  
Haiming Qin ◽  
Yue Zhao ◽  
Hong Liu ◽  
Zheng Gao ◽  
Jiyang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substitution Method ◽  
Cds Thin Films

Neutron Diffraction Study on the Structure of the Metallic Glass Cu57Zr43

1983 ◽  
Vol 38 (11) ◽  
pp. 1210-1222 ◽  
Author(s):  
P. Lamparter ◽  
S. Steeb ◽  
E. Grallath
Keyword(s):  
Neutron Diffraction ◽  
Metallic Glasses ◽  
Neutron Diffraction Study ◽  
Isotopic Substitution ◽  
Substitution Method ◽  
Chemical Ordering ◽  
Structure Factors ◽  
Theoretical Investigations ◽  
Binary Metallic Glasses ◽  
Scattering Contribution

The structure of amorphous Cu57Zr43 has been investigated by neutron diffraction using the isotopic substitution method with the isotopes 63Cu and 65Cu besides natural Cu. From the scattering contribution of concentration fluctuations to the measured structure factors and from the atomic distances chemical ordering is concluded to exist in amorphous Cu57Zr43. The structural results are compared with previous experimental and theoretical investigations of Cu- Zr- and other binary metallic glasses formed by transition metals. Evidence is given that the topological as well as the chemical short range order is asymmetric in respect to both components in this type of metallic glasses

scholarly journals An ADRC Method for Noncascaded Integral Systems Based on Algebraic Substitution Method and Its Structure

2018 ◽  
Vol 2018 ◽  
pp. 1-10 ◽  
Author(s):  
Zhijian Huang ◽  
Yudong Li ◽  
Yihua Liu ◽  
Wenbo Sui ◽  
Guichen Zhang
Keyword(s):  
Controller Design ◽  
Integral Form ◽  
State Variables ◽  
Control Effect ◽  
Substitution Method ◽  
Integral System ◽  
Numerical Example ◽  
Disturbance Rejection Control ◽  
Integral Systems ◽  
And Control

The Active Disturbance Rejection Control (ADRC) prefers the cascaded integral system for a convenient design or better control effect and takes it as a typical form. However, the state variables of practical system do not necessarily have a cascaded integral relationship. Therefore, this paper proposes an algebraic substitution method and its structure, which can convert a noncascaded integral system of PID control into a cascaded integral form. The adjusting parameters of the ADRC controller are also demonstrated. Meanwhile, a numerical example and the oscillation control of a flexible arm are demonstrated to show the conversion, controller design, and control effect. The converted system is proved to be more suitable for a direct ADRC control. In addition, for the numerical example, its control effect for the converted system is compared with a PID controller under different disturbances. The result shows that the converted system can achieve a better control effect under the ADRC than that of a PID. The theory is a guide before practice. This converting method not only solves the ADRC control problem of some noncascaded integral systems in theory and simulation but also expands the application scope of the ADRC method.

scholarly journals Исследование этапов превращения кремния в карбид кремния в процессе атомного замещения методами полного внешнего отражения рентгеновских лучей и рентгеновской дифрактомерии

2022 ◽  
Vol 64 (3) ◽  
pp. 326
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Е.В. Осипова ◽  
В.М. Стожаров
Keyword(s):  
Structural Quality ◽  
Total External Reflection ◽  
X Rays ◽  
Reflection Method ◽  
X Ray Diffraction ◽  
Modified Technique ◽  
Substitution Method ◽  
X Ray ◽  
Sic Films

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion.

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