Orientation-dependent acceleration sensitivity of silicon-based MEMS resonators

2016 ◽  
Author(s):  
Beheshte Khazaeili ◽  
Reza Abdolvand
Keyword(s):  
Mems Resonators ◽  
Silicon Based

Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators

2018 ◽  
Vol 65 (1) ◽  
pp. 34-38 ◽  
Author(s):  
Huiqi Gong ◽  
Wenjun Liao ◽  
En Xia Zhang ◽  
Andrew L. Sternberg ◽  
Michael W. McCurdy ◽  
...  
Keyword(s):  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Mems Resonators ◽  
Dose Effects ◽  
Silicon Based ◽  
Total Ionizing Dose Effects

Frequency stability of wafer-scale film encapsulated silicon based MEMS resonators

2007 ◽  
Vol 136 (1) ◽  
pp. 125-131 ◽  
Author(s):  
Bongsang Kim ◽  
Rob N. Candler ◽  
Matthew A. Hopcroft ◽  
Manu Agarwal ◽  
Woo-Tae Park ◽  
...  
Keyword(s):  
Frequency Stability ◽  
Wafer Scale ◽  
Mems Resonators ◽  
Silicon Based

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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