Temperature Noise Model for MOSFET Noise Characterization

2000 ◽  
Author(s):  
A. Pascht ◽  
D. Wiegner ◽  
M. Berroth
Keyword(s):  
Noise Model ◽  
Noise Characterization ◽  
Temperature Noise

A direct extraction formula for the FET temperature noise model

1997 ◽  
Vol 16 (4) ◽  
pp. 208-212 ◽  
Author(s):  
Mikael Garcia ◽  
J�rgen Stenarson ◽  
Herbert Zirath ◽  
Ilcho Angelov
Keyword(s):  
Noise Model ◽  
Direct Extraction ◽  
Temperature Noise

Neutron-temperature noise model for a wwer core

Atomic Energy ◽  
1992 ◽  
Vol 72 (5) ◽  
pp. 444-453 ◽  
Author(s):  
V. I. Pavelko
Keyword(s):  
Noise Model ◽  
Neutron Temperature ◽  
Temperature Noise

scholarly journals Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

2017 ◽  
Vol 7 (1) ◽  
pp. 176
Author(s):  
Z. A. Djennati ◽  
K. Ghaffour
Keyword(s):  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Noise Model ◽  
Good Prediction ◽  
High Electron ◽  
Source Impedance ◽  
Noise Amplifier ◽  
Noise Characterization ◽  
Noise Models

In this paper, a noise revision of an InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistor (pHEMT) in presented. The noise performances of the device were predicted over a range of frequencies from 1GHz to 100GHz. The minimum noise figure (NFmin), the noise resistance (Rn) and optimum source impedance (Zopt) were extracted using two approaches. A physical model that includes diffusion noise and G-R noise models and an analytical model based on an improved PRC noise model that considers the feedback capacitance Cgd. The two approaches presented matched results allowing a good prediction of the noise behaviour. The pHEMT was used to design a single stage S-band low noise amplifier (LNA). The LNA demonstrated a gain of 12.6dB with a return loss coefficient of 2.6dB at the input and greater than -7dB in the output and an overall noise figure less than 1dB.

Small-signal and temperature noise model for MOSFETs

2002 ◽  
Vol 50 (8) ◽  
pp. 1927-1934 ◽  
Author(s):  
A. Pascht ◽  
M. Grozing ◽  
D. Wiegner ◽  
M. Berroth
Keyword(s):  
Noise Model ◽  
Small Signal ◽  
Temperature Noise

A new two-temperature noise model for FET mixers suitable for CAD

2002 ◽  
Author(s):  
F. Danneville ◽  
S. Fan ◽  
B. Tamen ◽  
G. Dambrine ◽  
A. Cappy
Keyword(s):  
Noise Model ◽  
Temperature Noise ◽  
Two Temperature

A new extraction method for the two-parameter FET temperature noise model

1998 ◽  
Vol 46 (11) ◽  
pp. 1679-1685 ◽  
Author(s):  
M. Garcia ◽  
J. Stenarson ◽  
K. Yhland ◽  
H. Zirath ◽  
I. Angelov
Keyword(s):  
Extraction Method ◽  
Noise Model ◽  
Temperature Noise ◽  
Two Parameter
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