The Future Is Low Power and Test

2008 ◽  
Author(s):  
T. W. Williams
Keyword(s):  
Low Power ◽  
The Future

Less Power, Greater Conflict

2018 ◽  
Vol 49 (1) ◽  
pp. 47-62 ◽  
Author(s):  
Petra C. Schmid
Keyword(s):  
Low Power ◽  
High Power ◽  
Goal Pursuit ◽  
Goal Conflict ◽  
Personal Goals ◽  
Multiple Goals ◽  
Objective Performance ◽  
The Future ◽  
The Way

Abstract. Power facilitates goal pursuit, but how does power affect the way people respond to conflict between their multiple goals? Our results showed that higher trait power was associated with reduced experience of conflict in scenarios describing multiple goals (Study 1) and between personal goals (Study 2). Moreover, manipulated low power increased individuals’ experience of goal conflict relative to high power and a control condition (Studies 3 and 4), with the consequence that they planned to invest less into the pursuit of their goals in the future. With its focus on multiple goals and individuals’ experiences during goal pursuit rather than objective performance, the present research uses new angles to examine power effects on goal pursuit.

scholarly journals Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3166
Author(s):  
Sayed Md Tariful Azam ◽  
Abu Saleh Md Bakibillah ◽  
Md Tanvir Hasan ◽  
Md Abdus Samad Kamal
Keyword(s):  
Low Power ◽  
Work Function ◽  
Potential Candidate ◽  
Gate Electrodes ◽  
The Future ◽  
Work Function Difference ◽  
High Transconductance ◽  
Dual Material ◽  
Gate Work Function ◽  
Function Difference

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (∆ϕS-D) of the source (ϕS) and drain (ϕD) side gate electrodes. In particular, the work function of the drain (ϕD) side gate electrodes was varied with respect to the high work function of the source side gate electrode (Pt, ϕS = 5.65 eV) to produce the step gate work function. It was found that the device performance varies with the variation of gate work function difference (∆ϕS-D) due to a change in the electric field distribution, which also changes the carrier (hole) distribution of the device. We achieved low subthreshold slope (SS) and off-state current (Ioff) of 30.89 mV/dec and 0.39 pA/µm, respectively, as well as low power dissipation, when the gate work function difference (∆ϕS-D = 1.02 eV) was high. Therefore, the device can be a potential candidate for the future low power digital applications. On the other hand, high transconductance (gm), high cut-off frequency (fT), and low output conductance (gd) of the device at low gate work function difference (∆ϕS-D = 0.61 eV) make it a viable candidate for the future low power analog applications.

What's cool for the future of ultra low power designs?

2010 ◽  
Author(s):  
Nagaraj NS ◽  
John Byler ◽  
Koorosh Nazifi ◽  
Venugopal Puvvada ◽  
Toshiyuki Saito ◽  
...  
Keyword(s):  
Low Power ◽  
Ultra Low Power ◽  
The Future

CMOS DEVICES ARCHITECTURES AND TECHNOLOGY INNOVATIONS FOR THE NANOELECTRONICS ERA

2006 ◽  
Vol 16 (01) ◽  
pp. 193-219 ◽  
Author(s):  
S. DELEONIBUS ◽  
B. de SALVO ◽  
T. ERNST ◽  
O. FAYNOT ◽  
T. POIROUX ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Short Channel Effects ◽  
Short Channel ◽  
Trade Offs ◽  
Future System ◽  
The Future ◽  
Channel Effects

Innovations in electronics history have been possible because of the strong association of devices and materials research. The demand for low voltage, low power and high performance are the great challenges for engineering of sub 50nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. It will be very difficult to compete with CMOS logic because of the low series resistance required to obtain high performance. By introducing new materials ( Ge , diamond/graphite Carbon, HiK, …), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating new disruptive devices. The association of C-diamond with HiK as a combination for new functionalized Buried Insulators, for example, will bring new ways of improving short channel effects and suppress self-heating. That will allow new optimization of Ion-Ioff trade offs. The control of low power dissipation and short channel effects together with high performance will be the major challenges in the future.

Mood Lamp Berbasis Microcontroller

2018 ◽  
Vol 9 (2) ◽  
pp. 53-57
Author(s):  
Arief Budijanto ◽  
Tamaji
Keyword(s):  
Remote Control ◽  
Low Power ◽  
Creative Industries ◽  
Control Signal ◽  
Blue Led ◽  
Business Opportunity ◽  
The Future ◽  
Led Lights

— Mood lamp is a lamp made from RGB (red, green, blue) led that can be programmed based on its color through remote control, so that the color of the lamp can be determined by the user according to his mood. This lamp is designed using 89C2051 microcontroller with low power technology and uses RGB leds that can be programmed into several colors via a remote control. The remote control signal in this study uses the standard NEC remote code. The results of the led lights experiment can be programmed into 7 colors, namely red, blue, cyan, yellow, magenta, white, and green. The purpose of the results of this study in the future so that it can be used as a business opportunity in the field of creative industries, because this mood lamp can be used as a garden light, home porch lights, restaurants and cafes.

War, Revolution, and the Growth of the Coercive State

1988 ◽  
Vol 21 (1) ◽  
pp. 45-65 ◽  
Author(s):  
TED ROBERT GURR
Keyword(s):  
Low Power ◽  
Political Culture ◽  
International Conflict ◽  
External Environment ◽  
Violent Conflict ◽  
Coercive State ◽  
Internal Conflicts ◽  
Political Cultures ◽  
The Future

Modern states are powerful, resilient institutions, the most durable of which have established and consolidated their rule through conquest, revolution, and war. Successful involvement in violent conflict leads to the development of militarized and police states and reinforces elite political cultures that favor the use of coercion in future disputes. If warfare has unfavorable outcomes, elites will prefer noncoercive strategies in the future. From these and other propositions are derived models of the processes by which garrison states emerge and persist in autocracies and democracies. States with high material capabilities are more likely to become garrison states than weaker states, which tend to avoid international conflict and to rely on accommodation in internal conflicts. States with low political capabilities are susceptible to revolutionary overthrow and the establishment of revolutionary garrison states. The role of diversion of domestic conflicts to the external environment also is considered. One general conclusion is that only homogeneous democracies with low power capabilities and limited alliance obligations are unlikely to develop the institutions and political culture of militarized and police states.

IP Connected Low Power Wireless Personal Area Networks in the Future Internet

2012 ◽  
pp. 191-213 ◽  
Author(s):  
Rune Hylsberg Jacobsen ◽  
Thomas Skjødeberg Toftegaard ◽  
Jens Kristian Kjærgaard
Keyword(s):  
Internet Of Things ◽  
Low Power ◽  
Future Internet ◽  
The Internet ◽  
Personal Area Networks ◽  
Wireless Personal Area Networks ◽  
High Data ◽  
Available Energy ◽  
The Future ◽  
The Internet Of Things

The Internet of Things is a key concept of the Future Internet. The Internet of Things potentially interconnects billions of small devices in a large ubiquitous infrastructure based on the Internet Protocol (IP). Typically, these devices will be limited in computational capacity, memory, and available energy and will suffer a high data loss rate when integrated into a network infrastructure. This poses significant challenges in the network design. This chapter describes the assumptions, technologies, and challenges for transmitting IPv6 over low power wireless personal area networks (LoWPANs). The authors address the key mechanisms from network aspects down to device design aspects and discuss how technologies interplay to make real application deployment practical for the Internet of Things.

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