Effect of anodization conditions on the breakdown voltage of nanoporous aluminium oxide

AbstractBased on previous work (7) a method to simultaneously determine vamidothion [I], vamidothion-sulfoxide [II] and vamidothion sulfone [III] in tobacco has been developed. The compounds are extracted with water/acetone/acetic acid from the tobacco, cleansed over an aluminium oxide column and then determined on the gas chromatograph with the specific sulphur detector. Rates of recovery are 70 % - 92 %, the determination level is 0.1 ppm. Mass spectrometry and nuclear magnetic resonance data of vamidothion [I], vamidothion-sulfoxide [ II ] and vamidothion-sulfone [III] are given.

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Testing Aluminium Oxide based Ceramics at Irregular Interrupted Cut

Technological Engineering ◽

10.2478/teen-2013-0017 ◽

2013 ◽

Vol 10 (2) ◽

pp. 26-28

Author(s):

Ladislav Kyncl ◽

Robert Cep ◽

Pavel Novacek ◽

Jiri Schreier

Keyword(s):

Aluminium Oxide ◽

Cutting Effect ◽

Intermittent Cutting

Abstract This article discusses the test removable ceramic plates during machining with interrupted cut. Tests were performed on a lathe, which was clamped preparation which simulated us the interrupted cut. By changing the number plates mounted in a preparation it was a regular or irregular cut. When with four plates it was regular interrupted cut, the remaining three variants were already irregular cut. It was examined whether it will have the irregular intermittent cutting effect on the insert and possibly how it will change life of inserts during irregular interrupted cut.

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Fundamental Considerations for CDM Failure in 90nm Products

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0055 ◽

2006 ◽

Author(s):

Nobuyuki Wakai ◽

Yuji Kobira ◽

Hidemitsu Egawa ◽

Masayoshi Tsutsumi

Keyword(s):

Breakdown Voltage ◽

High Speed ◽

Gate Oxide ◽

Critical Parameters ◽

Protection Device ◽

Oxide Breakdown ◽

Technology Products ◽

Charged Device ◽

Device Size ◽

Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

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