A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs

2006 European Solid-State Device Research Conference ◽

10.1109/essder.2006.307719 ◽

2006 ◽

Cited By ~ 5

Author(s):

Dawei Heh ◽

Gennadi Bersuker ◽

Rino Choi ◽

Chadwin Young ◽

Byoung Lee

Keyword(s):

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796085 ◽

2008 ◽

Cited By ~ 2

Author(s):

D.P. Ioannou ◽

S. Mittl ◽

G. LaRosa

Keyword(s):

Positive Bias ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

Applied Physics Letters ◽

10.1063/1.4811274 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232909 ◽

Cited By ~ 8

Author(s):

Han Jin Lim ◽

Youngkuk Kim ◽

In Sang Jeon ◽

Jaehyun Yeo ◽

Badro Im ◽

...

Keyword(s):

Metal Oxide ◽

Field Emission ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

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New insight on negative bias temperature instability degradation with drain bias of 28nm High-K Metal Gate p-MOSFET devices

Microelectronics Reliability ◽

10.1016/j.microrel.2014.05.010 ◽

2014 ◽

Vol 54 (11) ◽

pp. 2378-2382 ◽

Cited By ~ 6

Author(s):

Miao Liao ◽

Zhenghao Gan

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Drain Bias

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Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2013.07.026 ◽

2013 ◽

Vol 53 (9-11) ◽

pp. 1351-1354

Author(s):

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Hyeokjin Kim ◽

Gang-Jun Kim ◽

Ji-Hoon Seo ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Stress Voltage

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Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- $k$ Stacks

IEEE Electron Device Letters ◽

10.1109/led.2009.2032790 ◽

2009 ◽

Vol 30 (12) ◽

pp. 1347-1349 ◽

Cited By ~ 60

Author(s):

A. Kerber ◽

S.A. Krishnan ◽

E.A. Cartier

Keyword(s):

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Voltage Ramp

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Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process

Chinese Physics B ◽

10.1088/1674-1056/24/12/127305 ◽

2015 ◽

Vol 24 (12) ◽

pp. 127305

Author(s):

Lu-Wei Qi ◽

Hong Yang ◽

Shang-Qing Ren ◽

Ye-Feng Xu ◽

Wei-Chun Luo ◽

...

Keyword(s):

Positive Bias ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of pMOSFET with High-k/Metal Gate Stacks

ECS Transactions ◽

10.1149/05201.0953ecst ◽

2013 ◽

Vol 52 (1) ◽

pp. 953-957 ◽

Cited By ~ 1

Author(s):

S. Ren ◽

H. Yang ◽

W. Wang ◽

H. Xu ◽

W. Luo ◽

...

Keyword(s):

Negative Bias ◽

Degradation Mechanisms ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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The Degradation Mode of Dual Metal-Gates/High-K CMOSFETs Induced by Bias-Temperature Instability

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635369 ◽

2006 ◽

Author(s):

Jian-Ping Wang Chin-Chang Liao

Keyword(s):

Temperature Instability ◽

Metal Gates ◽

Bias Temperature Instability ◽

High K ◽

Dual Metal

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Negative Bias Temperature Instability Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation, HfO2 High-k Dielectric and TaN Metal Gate

ECS Meeting Abstracts ◽

10.1149/ma2012-02/43/3224 ◽

2012 ◽

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

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