Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections

2006 European Solid-State Device Research Conference ◽

10.1109/essder.2006.307663 ◽

2006 ◽

Cited By ~ 9

Author(s):

I. Riolino ◽

M. Braccioli ◽

L. Lucci ◽

D. Esseni ◽

C. Fiegna ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Gas ◽

Quantum Corrections ◽

Double Gate ◽

Soi Devices ◽

3D Electron

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Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections

Solid-State Electronics ◽

10.1016/j.sse.2007.09.011 ◽

2007 ◽

Vol 51 (11-12) ◽

pp. 1558-1564 ◽

Cited By ~ 4

Author(s):

I. Riolino ◽

M. Braccioli ◽

L. Lucci ◽

P. Palestri ◽

D. Esseni ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Gas ◽

Quantum Corrections ◽

3D Electron

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Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/4/l01 ◽

2006 ◽

Vol 21 (4) ◽

pp. L29-L31 ◽

Cited By ~ 57

Author(s):

J Saint-Martin ◽

A Bournel ◽

F Monsef ◽

C Chassat ◽

P Dollfus

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Gas ◽

Double Gate ◽

2D Electron Gas ◽

Double Gate Mosfet

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Monte Carlo simulation of a two-dimensional electron gas on a disordered host lattice

Low Temperature Physics ◽

10.1063/1.3331589 ◽

2010 ◽

Vol 36 (3) ◽

pp. 243-249 ◽

Cited By ~ 5

Author(s):

V. V. Slavin

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Gas ◽

Host Lattice ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Monte Carlo simulation of electron-gas-solid interactions in silicate phases under VP-SEM

Procedia Manufacturing ◽

10.1016/j.promfg.2019.02.303 ◽

2019 ◽

Vol 32 ◽

pp. 916-920

Author(s):

Mohamed El Azzouzi ◽

Abdelfattah Achahbar ◽

Lahcen Khouchaf

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Gas

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Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

Journal of Applied Physics ◽

10.1063/1.1358321 ◽

2001 ◽

Vol 89 (10) ◽

pp. 5478-5487 ◽

Cited By ~ 122

Author(s):

F. Gamiz ◽

M. V. Fischetti

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Silicon On Insulator ◽

Double Gate

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Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation

IEEE Electron Device Letters ◽

10.1109/led.2008.2004784 ◽

2008 ◽

Vol 29 (11) ◽

pp. 1242-1244 ◽

Cited By ~ 6

Author(s):

G. Giusi ◽

G. Iannaccone ◽

M. Mohamed ◽

U. Ravaioli

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Injection ◽

Double Gate ◽

Full Band

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Monte Carlo simulation of InGaAs/strained-InAs/InGaAs channel HEMTs considering self-consistent analysis of 2-dimensional electron gas

2012 International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.2012.6403315 ◽

2012 ◽

Cited By ~ 1

Author(s):

Akira Endoh ◽

Issei Watanabe ◽

Takashi Mimura

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Gas ◽

Dimensional Electron ◽

Self Consistent ◽

Dimensional Electron Gas

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Determination of diffusion coefficients in degenerate electron gas using Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.365892 ◽

1997 ◽

Vol 82 (3) ◽

pp. 1220-1226 ◽

Cited By ~ 11

Author(s):

J. L. Thobel ◽

A. Sleiman ◽

R. Fauquembergue

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Diffusion Coefficients ◽

Electron Gas ◽

Degenerate Electron ◽

Degenerate Electron Gas

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Monte Carlo simulation of low-field mobility in strained double gate SOI transistors

Journal of Computational Electronics ◽

10.1007/s10825-007-0163-5 ◽

2007 ◽

Vol 7 (3) ◽

pp. 205-208 ◽

Cited By ~ 2

Author(s):

F. Gámiz ◽

A. Godoy ◽

C. Sampedro ◽

N. Rodriguez ◽

F. Ruiz

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Double Gate ◽

Low Field ◽

Field Mobility ◽

Low Field Mobility

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Time-dependent analysis of low VDD program operation in double-gate SONOS memories by full-band Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.3259409 ◽

2009 ◽

Vol 106 (10) ◽

pp. 104506

Author(s):

G. Giusi ◽

G. Iannaccone ◽

U. Ravaioli

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Time Dependent ◽

Double Gate ◽

Full Band ◽

Time Dependent Analysis

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