Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X ION using compact modeling approach

2016 ◽  
Author(s):  
Girish Pahwa ◽  
Tapas Dutta ◽  
Amit Agarwal ◽  
Yogesh Singh Chauhan
Keyword(s):  
Energy Efficient ◽  
Compact Modeling ◽  
Negative Capacitance ◽  
Modeling Approach

A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations

2017 ◽  
Vol 137 ◽  
pp. 70-79
Author(s):  
Fabian Hosenfeld ◽  
Fabian Horst ◽  
Benjamín Iñíguez ◽  
François Lime ◽  
Alexander Kloes
Keyword(s):  
Compact Modeling ◽  
Multi Scale ◽  
Modeling Approach ◽  
Quantum Wave

scholarly journals Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 75
Author(s):  
Maksim A. Pavlenko ◽  
Yuri A. Tikhonov ◽  
Anna G. Razumnaya ◽  
Valerii M. Vinokur ◽  
Igor A. Lukyanchuk
Keyword(s):  
Phase Diagram ◽  
Dielectric Properties ◽  
Temperature Dependence ◽  
Energy Efficient ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Negative Capacitance ◽  
Temperature Dependent ◽  
Domain Structures ◽  
Temperature Dependent Properties

It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielectric properties, and, hence, the corresponding behavior of the negative capacitance, are still poorly understood, restraining the technological progress thereof. Here we investigate the temperature-dependent properties of domain structures in the SrTiO3/PbTiO3/SrTiO3 heterostructures and demonstrate that the temperature–thickness phase diagram of the system includes the ferroelectric and paraelectric regions, which exhibit different responses to the applied electric field. Using phase-field modeling and analytical calculations we find the temperature dependence of the dielectric constant of ferroelectric layers and identify the regions of the phase diagram wherein the system demonstrates negative capacitance. We further discuss the optimal routes for implementing negative capacitance in energy-efficient ferroelectric field-effect transistors.

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