Mechanical and microstructure characterization of high aspect ratio electroplated through-wafer copper interconnects

2006 ◽  
Author(s):  
R. Preisser ◽  
P. Backus ◽  
P. Lim ◽  
D. Witarsa ◽  
John H.L. Pang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Microstructure Characterization ◽  
Copper Interconnects

Fabrication and electrical characterization of high aspect ratio poly-silicon filled through-silicon vias

2012 ◽  
Vol 22 (5) ◽  
pp. 055021 ◽  
Author(s):  
Pradeep Dixit ◽  
Tapani Vehmas ◽  
Sami Vähänen ◽  
Philippe Monnoyer ◽  
Kimmo Henttinen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrical Characterization ◽  
Through Silicon Vias ◽  
Poly Silicon ◽  
Silicon Vias

Analysis and characterization of high-resolution and high-aspect-ratio imaging fiber bundles

2015 ◽  
Vol 54 (32) ◽  
pp. 9422 ◽  
Author(s):  
Nojan Motamedi ◽  
Salman Karbasi ◽  
Joseph E. Ford ◽  
Vitaliy Lomakin
Keyword(s):  
High Resolution ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Fiber Bundles ◽  
Ratio Imaging

The Use of Metallographic and SEM Analysis for Characterization of Sidewall Surfaces in MEMS Devices with DRIE Processing

2010 ◽  
Vol 2010 (1) ◽  
pp. 000703-000706
Author(s):  
Colin Stevens ◽  
Robert Dean ◽  
Samuel Lawrence ◽  
Lee Levine
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Measurement Techniques ◽  
Sem Analysis ◽  
Defect Structures ◽  
Mems Devices ◽  
Depth Of Focus ◽  
Surface Conditions ◽  
Side Walls

The Bosch Deep Reactive Ion Etch Process is commonly used for the manufacture of MEMS and MOEMS devices that require deep high aspect ratio trenches. In many cases fully released, high aspect ratio features can be generated in one pass. However the process must be understood to avoid generating some of the defect structures that are characteristic of the process. Defects such as scalloping, silicon grass, and undercutting at the interface of a nonconductive layer can be controlled by process parameters and optimization. Measurement and characterization of the defective structures is a key element of controlling them. The use of SEM measurement techniques for characterizing the small features associated with scalloping and silicon grass is essential. No other technique is capable of providing the large depth of focus required to visualize these features. The use of metallographic techniques furthers understanding of the surface conditions on the side walls of these deep trenches.

scholarly journals Fabrication of Ultra-High Aspect Ratio (>420:1) Al2O3 Nanotube Arraysby Sidewall TransferMetal Assistant Chemical Etching

Micromachines ◽  
2020 ◽  
Vol 11 (4) ◽  
pp. 378 ◽  
Author(s):  
Hailiang Li ◽  
Changqing Xie
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Atomic Layer ◽  
Nanotube Arrays ◽  
Al2o3 Layer ◽  
Practical Applications ◽  
Aspect Ratios ◽  
Layer Deposition

We report a robust, sidewall transfer metal assistant chemical etching scheme for fabricating Al2O3 nanotube arrays with an ultra-high aspect ratio. Electron beam lithography followed by low-temperature Au metal assisted chemical etching (MacEtch) is used to pattern high resolution, high aspect ratio, and vertical silicon nanostructures, used as a template. This template is subsequently transferred by an atomic layer deposition of the Al2O3 layer, followed by an annealing process, anisotropic dry etching of the Al2O3 layer, and a sacrificial silicon template. The process and characterization of the Al2O3 nanotube arrays are discussed in detail. Vertical Al2O3 nanotube arrays with line widths as small as 50 nm, heights of up to 21 μm, and aspect ratios up to 420:1 are fabricated on top of a silicon substrate. More importantly, such a sidewall transfer MacEtch approach is compatible with well-established silicon planar processes, and has the benefits of having a fully controllable linewidth and height, high reproducibility, and flexible design, making it attractive for a broad range of practical applications.

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