Advanced 2D/3D ESD device simulation-a powerful tool already used in a pre-Si phase

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) ◽

10.1109/eosesd.2000.890111 ◽

2002 ◽

Cited By ~ 18

Author(s):

K. Esmark ◽

W. Stadler ◽

M. Wendel ◽

H. Gossner ◽

X. Guggenmos ◽

...

Keyword(s):

Device Simulation

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A tin-based perovskite solar cell with an inverted hole-free transport layer to achieve high energy conversion efficiency by SCAPS device simulation

Optical and Quantum Electronics ◽

10.1007/s11082-021-03175-5 ◽

2021 ◽

Vol 53 (9) ◽

Author(s):

Liangsheng Hao ◽

Tong Li ◽

Xinxia Ma ◽

Jiang Wu ◽

Lingxia Qiao ◽

...

Keyword(s):

Solar Cell ◽

Energy Conversion ◽

Conversion Efficiency ◽

Device Simulation ◽

Energy Conversion Efficiency ◽

High Energy ◽

Perovskite Solar Cell ◽

Transport Layer ◽

High Energy Conversion Efficiency ◽

Free Transport

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Machine Learning Based Device Simulation Using Multi-variable Non-linear Regression to Assess the Impact of Device Parameter Variability on Threshold Voltage of Double Gate-All-Around (DGAA) MOSFET

2020 IEEE 2nd International Conference on Circuits and Systems (ICCS) ◽

10.1109/iccs51219.2020.9336608 ◽

2020 ◽

Author(s):

Sandeep Moparthi ◽

Chandan Yadav ◽

Gopi Krishna Saramekala ◽

Pramod Kumar Tiwari

Keyword(s):

Machine Learning ◽

Linear Regression ◽

Threshold Voltage ◽

Device Simulation ◽

Double Gate ◽

Device Parameter ◽

Non Linear ◽

The Impact

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Soft Error Tolerance of Standard and Stacked Latches Dependending on Substrate Bias in a FDSOI Process Evaluated by Device Simulation

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320705 ◽

2019 ◽

Author(s):

Kentaro Kojima ◽

Jun Furuta ◽

Kazutoshi Kobayashi

Keyword(s):

Device Simulation ◽

Soft Error ◽

Error Tolerance ◽

Substrate Bias

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Device Simulation of Poly (3-Hexylthiophene) HTL Based Single and Double Halide Perovskite Solar Cells

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc45281.2020.9300485 ◽

2020 ◽

Author(s):

Sakshi Sharma ◽

Shivani Gohri ◽

Rahul Pandey ◽

Jaya Madan ◽

Rajnish Sharma

Keyword(s):

Solar Cells ◽

Perovskite Solar Cells ◽

Device Simulation ◽

Halide Perovskite

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Device simulation of low cost HTM free perovskite solar cell based on TiO2 electron transport layer

10.1063/5.0001230 ◽

2020 ◽

Author(s):

Shambhavi Rai ◽

B. K. Pandey ◽

D. K. Dwivedi

Keyword(s):

Solar Cell ◽

Electron Transport ◽

Low Cost ◽

Device Simulation ◽

Perovskite Solar Cell ◽

Transport Layer ◽

Electron Transport Layer

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Gridding techniques for the level set method in semiconductor process and device simulation

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621404 ◽

2002 ◽

Author(s):

E.C. Kan ◽

Ze-Kai Hsiau ◽

V. Rao ◽

R.W. Dutton

Keyword(s):

Level Set Method ◽

Level Set ◽

Device Simulation ◽

Semiconductor Process

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Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222439 ◽

2012 ◽

Cited By ~ 1

Author(s):

E. M. Bazizi ◽

S. M. Pandey ◽

C. Wang ◽

I. Jiang ◽

S. Chu ◽

...

Keyword(s):

Laser Annealing ◽

Device Simulation ◽

Cmos Technology ◽

Metal Gate ◽

Annealing Conditions ◽

High K

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A Global Self-Heating Model for Device Simulation

30th European Solid-State Device Research Conference ◽

10.1109/essderc.2000.194780 ◽

2000 ◽

Cited By ~ 1

Author(s):

T. Grasser ◽

R. Quay ◽

V. Palankovski ◽

S. Selberherr

Keyword(s):

Device Simulation ◽

Self Heating ◽

Heating Model

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Electronic Device Simulation

Integrated Photonics Research ◽

10.1364/ipr.1992.md1 ◽

1992 ◽

Author(s):

A. Drobot

Keyword(s):

Electronic Device ◽

Device Simulation

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Device simulation of a novel strained silicon channel RF LDMOS

Microelectronic Engineering ◽

10.1016/j.mee.2011.12.014 ◽

2012 ◽

Vol 94 ◽

pp. 29-32 ◽

Cited By ~ 4

Author(s):

V. Fathipour ◽

S. Fathipour ◽

M. Fathipour ◽

M.A. Malakootian

Keyword(s):

Device Simulation ◽

Strained Silicon

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