Device simulation of a novel strained silicon channel RF LDMOS

2012 ◽  
Vol 94 ◽  
pp. 29-32 ◽  
Author(s):  
V. Fathipour ◽  
S. Fathipour ◽  
M. Fathipour ◽  
M.A. Malakootian
Keyword(s):  
Device Simulation ◽  
Strained Silicon

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Atomistic Calculation of Elastic Moduli in Strained Silicon

2007 ◽  
Author(s):  
Richard Zhu ◽  
Ernian Pan ◽  
Peter W. Chung ◽  
Xinli Cai ◽  
Kim M. Liew ◽  
...  
Keyword(s):  
Elastic Moduli ◽  
Strained Silicon ◽  
Atomistic Calculation

scholarly journals Indirect light absorption model for highly strained silicon infrared sensors

2021 ◽  
Vol 130 (5) ◽  
pp. 055105
Author(s):  
Nicolas Roisin ◽  
Guillaume Brunin ◽  
Gian-Marco Rignanese ◽  
Denis Flandre ◽  
Jean-Pierre Raskin
Keyword(s):  
Light Absorption ◽  
Strained Silicon ◽  
Absorption Model ◽  
Infrared Sensors ◽  
Highly Strained
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