Integrated High Speed Current-Mode Frequency Divider with Inductive Peaking Structure

2014 ◽  
Author(s):  
Hyeim Jeong ◽  
Jungwoong Park ◽  
Sehyuk Ann ◽  
Namsoo Kim
Keyword(s):  
High Speed ◽  
Current Mode ◽  
Mode Frequency ◽  
Frequency Divider ◽  
Inductive Peaking

A 90nm PVT Tolerant Current Mode Frequency Divider with Wide Locking Range

2020 ◽  
Author(s):  
Madhusudan Maiti ◽  
Shubhro Chakrabartty ◽  
AlaaDdin Al-Shidaifat ◽  
Hanjung Song ◽  
Bidyut K Bhattacharyya ◽  
...  
Keyword(s):  
Current Mode ◽  
Mode Frequency ◽  
Frequency Divider ◽  
Locking Range ◽  
Wide Locking Range

scholarly journals High-speed CMOS Frequency Divider with Inductive Peaking Technique

2014 ◽  
Vol 15 (6) ◽  
pp. 309-314 ◽  
Author(s):  
Jung-Woong Park ◽  
Se-Hyuk Ahn ◽  
Hye-Im Jeong ◽  
Nam-Soo Kim
Keyword(s):  
High Speed ◽  
Frequency Divider ◽  
Inductive Peaking

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

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