A Large-Signal Model of GaN HEMTs for Linear High Power Amplifier Design

2006 ◽  
Author(s):  
Endalkachew Mengistu ◽  
Gunter Kompa
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Large Signal ◽  
Signal Model ◽  
High Power Amplifier ◽  
Gan Hemts ◽  
Amplifier Design

A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design

2001 ◽  
Vol 49 (9) ◽  
pp. 1626-1633 ◽  
Author(s):  
Youngoo Yang ◽  
Young Yun Woo ◽  
Jaehyok Yi ◽  
Bumman Kim
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Large Signal ◽  
Signal Model ◽  
High Power Amplifier ◽  
Amplifier Design

A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

2017 ◽  
Vol 65 (8) ◽  
pp. 2836-2846 ◽  
Author(s):  
Yuehang Xu ◽  
Changsi Wang ◽  
Huan Sun ◽  
Zhang Wen ◽  
Yunqiu Wu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Large Signal ◽  
High Power Amplifier ◽  
Gan Hemts

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

Sign in / Sign up

Export Citation Format

Share Document