GaAs FET large-signal model for high power amplifier

2003 ◽  
Author(s):  
J. Ma ◽  
Q. Xiao ◽  
B.L. Ooi ◽  
X.D. Zhou ◽  
S.T. Chew
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Large Signal ◽  
Signal Model ◽  
High Power Amplifier

A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design

2001 ◽  
Vol 49 (9) ◽  
pp. 1626-1633 ◽  
Author(s):  
Youngoo Yang ◽  
Young Yun Woo ◽  
Jaehyok Yi ◽  
Bumman Kim
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Large Signal ◽  
Signal Model ◽  
High Power Amplifier ◽  
Amplifier Design

A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

2017 ◽  
Vol 65 (8) ◽  
pp. 2836-2846 ◽  
Author(s):  
Yuehang Xu ◽  
Changsi Wang ◽  
Huan Sun ◽  
Zhang Wen ◽  
Yunqiu Wu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Large Signal ◽  
High Power Amplifier ◽  
Gan Hemts

A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

2012 ◽  
Vol 4 (3) ◽  
pp. 267-274 ◽  
Author(s):  
Dirk Schwantuschke ◽  
Christian Haupt ◽  
Rudolf Kiefer ◽  
Peter Brückner ◽  
Matthias Seelmann-Eggebert ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Gain ◽  
High Electron ◽  
Large Signal ◽  
V Band ◽  
High Power Amplifier ◽  
Dual Gate

In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

An Octave Bandwidth, High PAE, Linear, Class J GaN High Power Amplifier

2012 ◽  
Author(s):  
Kris Skowronski ◽  
Steve Nelson ◽  
Rajesh Mongia ◽  
Howard Sheehan ◽  
Sid Anderson
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Power Amplifier

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

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