Study on Metallized Film Capacitor and its Voltage Maintaining Performance

Author(s):  
Hua Li ◽  
Fuchang Lin ◽  
Heqing Zhong ◽  
Ling Dai ◽  
Yongxia Han ◽  
...  
Keyword(s):  
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.


2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh

2007 ◽  
Author(s):  
Huiqing Wen ◽  
Xuhui Wen ◽  
Jun Liu ◽  
Xinhua Guo ◽  
Feng Zhao

2016 ◽  
Vol 106 ◽  
pp. 93-98 ◽  
Author(s):  
Xinwen Peng ◽  
Wenhui Xu ◽  
Linlin Chen ◽  
Yichun Ding ◽  
Tianrou Xiong ◽  
...  

Author(s):  
Y. Vuillermet ◽  
O. Caebec ◽  
J.M. Lupin ◽  
A. Saker ◽  
G. Meunier ◽  
...  
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