Static behavior analysis of silicon carbide power MOSFET for temperature variations

2016 ◽  
Author(s):  
Wadia Jouha ◽  
Pascal Dherbecourt ◽  
Eric Joubert ◽  
Ahmed El Oualkadi
Keyword(s):  
Silicon Carbide ◽  
Behavior Analysis ◽  
Static Behavior ◽  
Temperature Variations ◽  
Power Mosfet

scholarly journals Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

2019 ◽  
Vol 9 (2) ◽  
pp. 1453
Author(s):  
Ramani Kannan ◽  
Saranya Krishnamurthy ◽  
Chay Che Kiong ◽  
Taib B Ibrahim
Keyword(s):  
Silicon Carbide ◽  
Dynamic Characteristics ◽  
Gamma Ray ◽  
Electronic Devices ◽  
Dose Effect ◽  
Power Electronic ◽  
Switching Speed ◽  
Power Mosfet ◽  
Power Mosfets ◽  
Gamma Ray Irradiation

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

2018 ◽  
Vol 33 (11) ◽  
pp. 9130-9133 ◽  
Author(s):  
Wadia Jouha ◽  
Ahmed El Oualkadi ◽  
Pascal Dherbecourt ◽  
Eric Joubert ◽  
Mohamed Masmoudi
Keyword(s):  
Silicon Carbide ◽  
Extraction Method ◽  
Parameter Extraction ◽  
Power Mosfet ◽  
Marquardt Algorithm ◽  
Levenberg Marquardt

Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

2018 ◽  
Vol 33 (12) ◽  
pp. 10774-10783 ◽  
Author(s):  
Michihiro Shintani ◽  
Yohei Nakamura ◽  
Kazuki Oishi ◽  
Masayuki Hiromoto ◽  
Takashi Hikihara ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Potential ◽  
Circuit Simulation ◽  
Power Mosfet

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

2020 ◽  
Vol 67 (7) ◽  
pp. 1365-1373 ◽  
Author(s):  
K. Niskanen ◽  
A. D. Touboul ◽  
R. Coq Germanicus ◽  
A. Michez ◽  
A. Javanainen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Neutron Irradiation ◽  
Power Mosfet ◽  
Electrical Stress

Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

2021 ◽  
pp. 1-11
Author(s):  
Xiaowen Liang ◽  
Jinghao Zhao ◽  
Qiwen Zheng ◽  
JiangWei Cui ◽  
Sheng Yang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Power Mosfet ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability
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