Junction temperature estimation in IGBT power modules based on Kalman filter

AbstractExperimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$ Δ T j ) and the heating duration ($$t_{ON}$$ t ON ) are investigated. First, power cycling tests with single conditions (in $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON ), are performed in order to serve as test references. Then, combined power cycling tests with two-level stress conditions have been done sequentially. These tests are carried-out in the two sequences: low stress/high stress (LH) and high stress/low stress (HL) for both $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON . The tests conducted show that a sequencing in $$\Delta T_{j}$$ Δ T j regardless of the direction “high-low” or “low–high” leads to an acceleration of degradations and so, to shorter lifetimes. This is more pronounced when the difference between the stress levels is large. With regard to the heating duration ($$t_{ON}$$ t ON ), the effect seems insignificant. However, it is necessary to confirm the effect of this last parameter by additional tests.

Download Full-text

Numerical Thermal Simulation of Cryogenic Power Modules Under Liquid Nitrogen Cooling

Journal of Electronic Packaging ◽

10.1115/1.2229226 ◽

2005 ◽

Vol 128 (3) ◽

pp. 267-272 ◽

Cited By ~ 10

Author(s):

Hua Ye ◽

Harry Efstathiadis ◽

Pradeep Haldar

Keyword(s):

Liquid Nitrogen ◽

Electrical Current ◽

Oxide Semiconductor ◽

Junction Temperature ◽

Electronic Systems ◽

Power Module ◽

Power Modules ◽

Allowable Range ◽

Liquid Nitrogen Cooling ◽

Thermal Simulations

Understanding the thermal performance of power modules under liquid nitrogen cooling is important for the design of cryogenic power electronic systems. When the power device is conducting electrical current, heat is generated due to Joule heating. The heat needs to be efficiently dissipated to the ambient in order to keep the temperature of the device within the allowable range; on the other hand, it would be advantageous to boost the current levels in the power devices to the highest possible level. Projecting the junction temperature of the power module during cryogenic operation is a crucial step in designing the system. In this paper, we present the thermal simulations of two different types of power metal-oxide semiconductor field effect transistor modules used to build a cryogenic inverter under liquid nitrogen pool cooling and discussed their implications on the design of the system.

Download Full-text

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.437 ◽

2011 ◽

Vol 324 ◽

pp. 437-440

Author(s):

Raed Amro

Keyword(s):

Low Temperature ◽

Power Electronics ◽

Life Time ◽

Junction Temperature ◽

Limiting Factors ◽

Power Devices ◽

Packaging Technology ◽

Power Cycling ◽

Power Modules ◽

Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

Download Full-text