Method of junction temperature estimation and over temperature protection used for electric vehicle's IGBT power modules

AbstractExperimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$ Δ T j ) and the heating duration ($$t_{ON}$$ t ON ) are investigated. First, power cycling tests with single conditions (in $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON ), are performed in order to serve as test references. Then, combined power cycling tests with two-level stress conditions have been done sequentially. These tests are carried-out in the two sequences: low stress/high stress (LH) and high stress/low stress (HL) for both $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON . The tests conducted show that a sequencing in $$\Delta T_{j}$$ Δ T j regardless of the direction “high-low” or “low–high” leads to an acceleration of degradations and so, to shorter lifetimes. This is more pronounced when the difference between the stress levels is large. With regard to the heating duration ($$t_{ON}$$ t ON ), the effect seems insignificant. However, it is necessary to confirm the effect of this last parameter by additional tests.

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Numerical Thermal Simulation of Cryogenic Power Modules Under Liquid Nitrogen Cooling

Journal of Electronic Packaging ◽

10.1115/1.2229226 ◽

2005 ◽

Vol 128 (3) ◽

pp. 267-272 ◽

Cited By ~ 10

Author(s):

Hua Ye ◽

Harry Efstathiadis ◽

Pradeep Haldar

Keyword(s):

Liquid Nitrogen ◽

Electrical Current ◽

Oxide Semiconductor ◽

Junction Temperature ◽

Electronic Systems ◽

Power Module ◽

Power Modules ◽

Allowable Range ◽

Liquid Nitrogen Cooling ◽

Thermal Simulations

Understanding the thermal performance of power modules under liquid nitrogen cooling is important for the design of cryogenic power electronic systems. When the power device is conducting electrical current, heat is generated due to Joule heating. The heat needs to be efficiently dissipated to the ambient in order to keep the temperature of the device within the allowable range; on the other hand, it would be advantageous to boost the current levels in the power devices to the highest possible level. Projecting the junction temperature of the power module during cryogenic operation is a crucial step in designing the system. In this paper, we present the thermal simulations of two different types of power metal-oxide semiconductor field effect transistor modules used to build a cryogenic inverter under liquid nitrogen pool cooling and discussed their implications on the design of the system.

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Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.437 ◽

2011 ◽

Vol 324 ◽

pp. 437-440

Author(s):

Raed Amro

Keyword(s):

Low Temperature ◽

Power Electronics ◽

Life Time ◽

Junction Temperature ◽

Limiting Factors ◽

Power Devices ◽

Packaging Technology ◽

Power Cycling ◽

Power Modules ◽

Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

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In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater

Electronics ◽

10.3390/electronics10222745 ◽

2021 ◽

Vol 10 (22) ◽

pp. 2745

Author(s):

Alessandro Soldati ◽

Matteo Dalboni ◽

Roberto Menozzi ◽

Carlo Concari

Keyword(s):

Junction Temperature ◽

Controlled Environment ◽

Temperature Sensitive ◽

Polyimide Films ◽

Temperature Estimation ◽

Electric Parameter ◽

Conventional Procedure ◽

Thermal Chamber ◽

Characterization Procedure

The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper, we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.

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