SiGe HBT technology design approaches for RF-applications

The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. ◽

10.1109/edmo.2003.1259975 ◽

2004 ◽

Cited By ~ 1

Author(s):

M. Ostling ◽

B.G. Malm

Keyword(s):

Technology Design ◽

Sige Hbt ◽

Rf Applications

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Analysis of Self-heating of a SiGe HBT Designed for RF Applications According to the Percentage of Germanium

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.12(6).06001 ◽

2020 ◽

Vol 12 (6) ◽

pp. 06001-1-06001-5

Author(s):

A. Boulgheb ◽

◽

M. Lakhdara ◽

N. Kherief ◽

S. Latreche ◽

...

Keyword(s):

Sige Hbt ◽

Self Heating ◽

Rf Applications

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A SiGe HBT BiCMOS technology for mixed signal RF applications

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1997.647434 ◽

2002 ◽

Cited By ~ 46

Author(s):

D.C. Ahlgren ◽

G. Freeman ◽

S. Subbanna ◽

R. Groves ◽

D. Greenberg ◽

...

Keyword(s):

Mixed Signal ◽

Sige Hbt ◽

Bicmos Technology ◽

Rf Applications

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TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138713 ◽

1995 ◽

Vol 53 ◽

pp. 468-469

Author(s):

N. David Theodore ◽

Donald Y.C Lie ◽

J. H. Song ◽

Peter Crozier

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Room Temperature ◽

Strain Relaxation ◽

Bipolar Transistors ◽

Sige Hbt ◽

Integrated Circuit Manufacturing ◽

Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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