Breakdown stability of gold, aluminum, and tungsten Schottky barriers on gallium arsenide

B.J. Baliga; R. Ehle; A. Sears; P. Campbell; W. Garwacki; W. Katz

doi:10.1109/edl.1982.25528

Breakdown stability of gold, aluminum, and tungsten Schottky barriers on gallium arsenide

IEEE Electron Device Letters ◽

10.1109/edl.1982.25528 ◽

1982 ◽

Vol 3 (7) ◽

pp. 177-179 ◽

Cited By ~ 6

Author(s):

B.J. Baliga ◽

R. Ehle ◽

A. Sears ◽

P. Campbell ◽

W. Garwacki ◽

...

Keyword(s):

Gallium Arsenide ◽

Schottky Barriers ◽

And Tungsten

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High Schottky Barriers between Amorphous-Si-P Alloy and P-Type Gallium Arsenide

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.1664 ◽

1991 ◽

Vol 30 (Part 1, No. 8) ◽

pp. 1664-1665

Author(s):

Toshio Ogino

Keyword(s):

Gallium Arsenide ◽

Schottky Barriers ◽

Amorphous Si ◽

P Type

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The influence of low‐energy argon implantation on gallium arsenide Schottky barriers

Journal of Applied Physics ◽

10.1063/1.342801 ◽

1989 ◽

Vol 65 (6) ◽

pp. 2371-2375 ◽

Cited By ~ 16

Author(s):

Y. G. Wang ◽

S. Ashok

Keyword(s):

Gallium Arsenide ◽

Schottky Barriers ◽

Low Energy

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Phase interactions in the Pd-GaAs system and effects on structures with schottky barriers II. Examination of a gallium arsenide-metal interface by the secondary ion-ion emission method

Soviet Physics Journal ◽

10.1007/bf00898257 ◽

1981 ◽

Vol 24 (4) ◽

pp. 299-301

Author(s):

A. P. Vyatkin ◽

L. G. Kositsin ◽

N. K. Maksimova ◽

A. M. Misik ◽

V. P. Yanovskii

Keyword(s):

Gallium Arsenide ◽

Schottky Barriers ◽

Metal Interface ◽

Emission Method ◽

Ion Emission ◽

Secondary Ion

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The effect of substrate–epitaxial interface on the capacitance–voltage characteristics of Schottky barriers formed on sputtered films of gallium arsenide

Journal of Vacuum Science and Technology ◽

10.1116/1.571490 ◽

1982 ◽

Vol 20 (3) ◽

pp. 807-810 ◽

Cited By ~ 2

Author(s):

A. K. Kulkarni ◽

R. J. Soukup

Keyword(s):

Gallium Arsenide ◽

Schottky Barriers ◽

Sputtered Films ◽

Capacitance Voltage ◽

Epitaxial Interface

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Schottky barriers on p-type gallium arsenide prepared by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19860165 ◽

1986 ◽

Vol 22 (5) ◽

pp. 241 ◽

Cited By ~ 7

Author(s):

M. Missous ◽

E.H. Rhoderick ◽

K.E. Singer

Keyword(s):

Gallium Arsenide ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Schottky Barriers ◽

P Type

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Gallium Arsenide Surface Film Evaluation by Ellipsometry Its Effect on Schottky Barriers

Journal of The Electrochemical Society ◽

10.1149/1.2403467 ◽

1973 ◽

Vol 120 (3) ◽

pp. 408 ◽

Cited By ~ 76

Author(s):

A. C. Adams ◽

B. R. Pruniaux

Keyword(s):

Gallium Arsenide ◽

Surface Film ◽

Schottky Barriers

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Erratum: Experimental Study of Gold‐Gallium Arsenide Schottky Barriers

Journal of Applied Physics ◽

10.1063/1.1708857 ◽

1966 ◽

Vol 37 (6) ◽

pp. 2520-2520

Author(s):

F. A. Padovani ◽

G. G. Sumner

Keyword(s):

Experimental Study ◽

Gallium Arsenide ◽

Schottky Barriers

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The effect of substrate-epitaxial interface on the capacitance-voltage characteristics of Schottky barriers formed on sputtered films of gallium arsenide

Vacuum ◽

10.1016/0042-207x(83)90158-6 ◽

1983 ◽

Vol 33 (6) ◽

pp. 349

Keyword(s):

Gallium Arsenide ◽

Schottky Barriers ◽

Sputtered Films ◽

Capacitance Voltage ◽

Epitaxial Interface

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Experimental Study of Gold‐Gallium Arsenide Schottky Barriers

Journal of Applied Physics ◽

10.1063/1.1713940 ◽

1965 ◽

Vol 36 (12) ◽

pp. 3744-3747 ◽

Cited By ~ 188

Author(s):

F. A. Padovani ◽

G. G. Sumner

Keyword(s):

Experimental Study ◽

Gallium Arsenide ◽

Schottky Barriers

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Gallium arsenide (GaAs), Schottky barriers

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_217 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Gallium Arsenide ◽

Schottky Barriers

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