Schottky barriers on p-type gallium arsenide prepared by molecular beam epitaxy

1986 ◽  
Vol 22 (5) ◽  
pp. 241 ◽  
Author(s):  
M. Missous ◽  
E.H. Rhoderick ◽  
K.E. Singer
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Barriers ◽  
P Type

scholarly journals Terahertz Emission of Gallium Arsenide on Textured p-type Silicon (100) Substrates Grown via Molecular Beam Epitaxy

2018 ◽  
Vol 1 (1) ◽  
pp. 7
Author(s):  
Karl Cedric P. Gonzales ◽  
Karim M. Omambac ◽  
Elizabeth Ann P. Prieto ◽  
Jessica Pauline C. Afalla ◽  
Maria Herminia M. Balgos ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Potassium Hydroxide ◽  
Molecular Beam ◽  
Surface Texturing ◽  
Volume Ratio ◽  
Type Silicon ◽  
Order Of Magnitude ◽  
Wet Chemical ◽  
P Type

This study presents the terahertz (THz) emission of molecular beam epitaxy (MBE)-grown Gallium Arsenide (GaAs) on surface textured p-type Silicon (p- Si) (100) substrates. Surface texturing was achieved by anisotropic wet chemical etching using 5% wt Potassium Hydroxide (KOH): Isopropyl alcohol (IPA) (50:1) solution for 15, 30, 45, and 60 minutes. Reflectivity measurements for the textured p-Si(100) substrates indicated that the overall texturing increases with longer etching times. Raman spectroscopy of the post-growth samples confirmed GaAs growth. The THz emission intensities were the same order of magnitude. The GaAs grown on p-Si(100) textured for 60 minutes exhibited the most intense THz emission attributed to the increased absorption from a larger surface-to-volume ratio due to surface texturing. All GaAs on textured p-Si(100) samples had frequency bandwidth of ~2.5 THz.

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L508-L510 ◽  
Author(s):  
Tomoki Abe ◽  
Koshi Ando ◽  
Katsushi Ikumi ◽  
Hiroyasu Maeta ◽  
Junji Naruse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gaas Substrates ◽  
P Type

p-type conductivity control of ZnSe with insertion of ZnTe:Li submonolayers in metalorganic molecular-beam epitaxy

1998 ◽  
Vol 84 (11) ◽  
pp. 6100-6104 ◽  
Author(s):  
J. Hirose ◽  
K. Uesugi ◽  
M. Hoshiyama ◽  
T. Numai ◽  
I. Suemune ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Conductivity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type
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