The study of P-type and N-type diamond crystals synthesis by hot filament chemical vapor deposition

Author(s):  
Piyachat Sodngam ◽  
Surasak Niemcharoen ◽  
Wisut Titiroongraung ◽  
Vilailuck Siriwongrungson
1999 ◽  
Vol 8 (7) ◽  
pp. 1310-1314 ◽  
Author(s):  
Yoshikazu Aoki ◽  
Yuko Mitsuoka ◽  
Yoshihiro Nakamuta

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 269 ◽  
Author(s):  
Chang Weon Song ◽  
Rongguang Jin ◽  
Jung-Woo Yang ◽  
Nong-Moon Hwang ◽  
Kwang Ho Kim

In this study, acetone was used as a carbon source to deposit diamond films using tantalum filaments by hot filament chemical vapor deposition (HFCVD). For acetone fluxes of 80, 90, 130 and 170 standard cubic centimeters per min (sccm) and the respective hydrogen fluxes of 420, 410, 370, and 330 sccm, film thickness appeared to increase with increasing acetone, and high quality diamonds were deposited with well-defined facets of (111) and (100). For acetone fluxes of 210 and 250 sccm and the respective hydrogen fluxes of 290 and 250 sccm, however, the diamond quality was degraded with cauliflower-shaped structures evolving and the film thickness decreased with increasing acetone. The degradation of diamond quality was confirmed by Raman spectra and X-ray diffraction (XRD). Many diamond crystals grown at acetone fluxes of 80, 90, 130 and 170 sccm consisted of five (111) facets, indicating an icosahedral structure. At the corner where the five (111) facets met, there were pentagonal dimples, which implied that diamond crystals must have been etched. The decrease in film thickness at high acetone fluxes of 210 and 250 sccm also implied that the deposited film must have been etched. These results indicate that the two irreversible processes of deposition and etching occur simultaneously, which would violate the second law of thermodynamics from the classical concept of crystal growth by an individual atom. These puzzling results could be successfully explained by non-classical crystallization, where the building blocks for diamond films are nanoparticles formed in the gas phase.


2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.


2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  

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